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Effect of front-surface-field and back-surface-field on the performance of GaAs based-photovoltaic cell

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dc.citedby7
dc.contributor.authorGamel M.en_US
dc.contributor.authorJern K.P.en_US
dc.contributor.authorRashid E.en_US
dc.contributor.authorJing L.H.en_US
dc.contributor.authorYao L.K.en_US
dc.contributor.authorWong B.en_US
dc.contributor.authorid57215306835en_US
dc.contributor.authorid37461740800en_US
dc.contributor.authorid57215329739en_US
dc.contributor.authorid57190622221en_US
dc.contributor.authorid56903550000en_US
dc.contributor.authorid57215329405en_US
dc.date.accessioned2023-05-29T07:24:48Z
dc.date.available2023-05-29T07:24:48Z
dc.date.issued2019
dc.descriptionAluminum gallium arsenide; Conversion efficiency; Efficiency; Electronic design automation; Gallium arsenide; III-V semiconductors; Nanosensors; Nanotechnology; Photoelectrochemical cells; Photovoltaic cells; Photovoltaic effects; Semiconducting gallium; Semiconductor alloys; Active regions; Back surface fields; Band diagrams; Concentrated solar cells; Gallium arsenide cells; Illumination conditions; Silvaco; TCAD software; Solar cellsen_US
dc.description.abstractGaAs structures are commonly used in concentrated solar cell application, whereas the active region of the cell requires front surface field (FSF) and back surface field (BSF) to complete the band diagram and to improve the conversion efficiency up to 22 % under AM 1.5 illumination condition. However, the integration of different FSF and BSF materials such as AlGaAs, InGaP and InAlP contribute to diverse performance. A fair comparison between these materials will help to optimize the performance of GaAs devices. In this work, Silvaco TCAD software was used to simulate GaAs PV cell with different FSF and BSF materials under 1-sun and 100-sun AM 1.5 illumination condition. A conversion efficiency of 24.08 % and 27.22 % was achieved with InAlP FSF layer under 1-sun and 100-sun AM 1.5 spectrum, respectively. The results obtained from this study will contribute to a better understanding on the effect of FSF and BSF layers while obtaining the optimum FSF and BSF material for the GaAs-based photovoltaic cell. � 2019 IEEE.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo8940098
dc.identifier.doi10.1109/SENSORSNANO44414.2019.8940098
dc.identifier.scopus2-s2.0-85078146677
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85078146677&doi=10.1109%2fSENSORSNANO44414.2019.8940098&partnerID=40&md5=e5dddf8ac7b9a23fdbdf2db9f1323cc7
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/24588
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.sourceScopus
dc.sourcetitle2019 IEEE International Conference on Sensors and Nanotechnology, SENSORS and NANO 2019
dc.titleEffect of front-surface-field and back-surface-field on the performance of GaAs based-photovoltaic cellen_US
dc.typeConference Paperen_US
dspace.entity.typePublication
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