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High performance of a SOI-based lateral PIN photodiode using SiGe/Si multilayer quantum well

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dc.citedby4
dc.contributor.authorMenon P.S.en_US
dc.contributor.authorTasirin S.K.en_US
dc.contributor.authorAhmad I.en_US
dc.contributor.authorAbdullah S.F.en_US
dc.contributor.authorid57201289731en_US
dc.contributor.authorid55602329100en_US
dc.contributor.authorid12792216600en_US
dc.contributor.authorid14319069500en_US
dc.date.accessioned2023-12-29T07:46:27Z
dc.date.available2023-12-29T07:46:27Z
dc.date.issued2012
dc.description.abstractSilicon-on-insulator (SOI) based SiGe quantum well infrared pin photodiode has the potential of being a serious candidate for applications in sensing applications as well as in optical fiber communications. The present work investigates the performance of a virtual lateral PIN photodiode with a SiGe/Si multi-quantum well structure. In this paper, 5 periods of stacked SiGe quantum wells were grown on Si(100). A lateral PIN photodiode consisting of the SiGe/Si multi-quantum well layers as the active absorption layer with intensity response in the 700-1600 nm wavelength range was demonstrated. The results obtained for responsivity, total quantum efficiency and frequency response were 0.89 A/W, 71% and 21 GHz respectively for design parameters of intrinsic region length of 6 ?m, photoabsorption layer thickness of 50 ?m, incident optical power of 1 mW/cm2 and bias voltage of 3 V. As a conclusion, the SiGe/Si multi-quantum well solution in achieving the desired high performance photodiode was achieved. � 2012 IEEE.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo6417172
dc.identifier.doi10.1109/SMElec.2012.6417172
dc.identifier.epage406
dc.identifier.scopus2-s2.0-84874182629
dc.identifier.spage403
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84874182629&doi=10.1109%2fSMElec.2012.6417172&partnerID=40&md5=248e9c1418a64a6e60833faefc7d9cd0
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/30300
dc.pagecount3
dc.sourceScopus
dc.sourcetitle2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings
dc.subjectPIN photodiode
dc.subjectSiGe/Si multi quantum well (MQW)
dc.subjectSilvaco
dc.subjectSOI
dc.subjectDiodes
dc.subjectFrequency response
dc.subjectPhotodiodes
dc.subjectActive-absorption
dc.subjectDesign parameters
dc.subjectLateral PIN photodiodes
dc.subjectLayer thickness
dc.subjectMulti-quantum well structures
dc.subjectMultiquantum wells
dc.subjectOptical power
dc.subjectPhotoabsorptions
dc.subjectPin photodiode
dc.subjectResponsivity
dc.subjectSensing applications
dc.subjectSi(1 0 0)
dc.subjectSiGe quantum wells
dc.subjectSiGe/Si
dc.subjectSilicon-on-insulators
dc.subjectSilvaco
dc.subjectSOI
dc.subjectWavelength ranges
dc.subjectSemiconductor quantum wells
dc.titleHigh performance of a SOI-based lateral PIN photodiode using SiGe/Si multilayer quantum wellen_US
dc.typeConference paperen_US
dspace.entity.typePublication
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