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Influence of optimization of control factors on threshold voltage of 18 nm HfO2/TiSi2 NMOS

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dc.contributor.authorAtan N.B.en_US
dc.contributor.authorMajlis B.B.Y.en_US
dc.contributor.authorAhmad I.B.en_US
dc.contributor.authorChong K.H.en_US
dc.contributor.authorid26422792900en_US
dc.contributor.authorid6603071546en_US
dc.contributor.authorid12792216600en_US
dc.contributor.authorid36994481200en_US
dc.date.accessioned2023-05-29T07:26:25Z
dc.date.available2023-05-29T07:26:25Z
dc.date.issued2019
dc.description.abstractThis paper presents the influence of control factors as the process in development of 18 nm gate length NMOS transistor. The threshold voltage (VTH) can be minimized by optimal the control factors. Five control factors were selected through experiments. They are Adjustment VTH Implantation, Compensation Implantation, Compensation Energy Implantation, Source/Drain Implantation and Halo Implantation. While the two noise factors were introduced which are Phosphor Silicate Glass (PSG) temperature and Boron Phosphor Silicate Glass (BPSG) temperature to complete the combination with five control factors in process of Taguchi method L27 orthogonal array. The purpose of this research is to find the best value of interaction between combination controls factors and noise factors to achieve the best point of threshold voltage. In CMOS design, the threshold voltage is the benchmarking of physical parameter for determining the functional of transistor. The Virtual Wafer Fabrication SILVACO software was used to fabricate the 18 nm NMOS device. Hafnium Oxide (HfO2) and Titanium dioxide (TiO2) were utilized as the high-K materials and the Titanium Silicide (TiSi2) was utilized as metal gate. The statistics data are from the signal noise ratio (SNR) with nominal-the best (NTB) and the analysis of variance (ANOVA) of L27 orthogonal array are executed to minimize the variance of threshold voltage. The results show that the optimization and interaction method is achieved to perform the threshold voltage value with least variance is 0.3055 volts while the target value that is 0.302 � 12.7% volts from value recommendation by the International Roadmap for Semiconductor prediction 2012. � 2019 Institute of Advanced Engineering and Science. All rights reserved.en_US
dc.description.natureFinalen_US
dc.identifier.doi10.11591/ijeecs.v14.i1.pp295-302
dc.identifier.epage302
dc.identifier.issue1
dc.identifier.scopus2-s2.0-85061118562
dc.identifier.spage295
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85061118562&doi=10.11591%2fijeecs.v14.i1.pp295-302&partnerID=40&md5=dfe56d2079f37aa2c06fceab557c9ee2
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/24735
dc.identifier.volume14
dc.publisherInstitute of Advanced Engineering and Scienceen_US
dc.relation.ispartofAll Open Access, Hybrid Gold
dc.sourceScopus
dc.sourcetitleIndonesian Journal of Electrical Engineering and Computer Science
dc.titleInfluence of optimization of control factors on threshold voltage of 18 nm HfO2/TiSi2 NMOSen_US
dc.typeArticleen_US
dspace.entity.typePublication
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