Publication:
Effect of Cd1-xZnxS Window Layer Incorporation in CdTe Solar Cell by Numerical Simulation

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dc.citedby2
dc.contributor.authorDas N.K.en_US
dc.contributor.authorSengupta A.K.en_US
dc.contributor.authorDey M.en_US
dc.contributor.authorRahman K.S.en_US
dc.contributor.authorMatin M.A.en_US
dc.contributor.authorAmin N.en_US
dc.contributor.authorid34867805900en_US
dc.contributor.authorid57210525055en_US
dc.contributor.authorid56297554400en_US
dc.contributor.authorid56348138800en_US
dc.contributor.authorid57220488718en_US
dc.contributor.authorid7102424614en_US
dc.date.accessioned2023-05-29T07:26:15Z
dc.date.available2023-05-29T07:26:15Z
dc.date.issued2019
dc.descriptionCadmium alloys; Cadmium sulfide; Cadmium sulfide solar cells; Cadmium telluride; Copper compounds; Energy gap; II-VI semiconductors; Open circuit voltage; Reflection; Semiconducting cadmium telluride; Semiconducting tellurium compounds; Semiconductor doping; Solar cells; Solar power generation; Transparent conducting oxides; Wide band gap semiconductors; Zinc alloys; Zinc sulfide; Back contact; CdTe solar cells; Doping concentration; Optoelectronic properties; Recombination loss; Solar photovoltaics; Window layer; ZnTe:Cu electron reflector; Semiconducting cadmium compoundsen_US
dc.description.abstractCdTe is a very potential binary semiconductor material for solar photovoltaic application due to its superior optoelectronic properties. The overall performances of incorporating Cd1-XZnxS window layer in lieu of CdS layer in CdTe solar cell were investigated by SCAPS-1D simulator. The Cd1-XZnxS is an alloy of CdS and ZnS which increase band gap of window layer from 2.42 e V to 3.7 e V as a function of x (from x=0 to 1). The spectral response of the design Cd1-xZnxS}/CdTe cell improves in blue region which implies the big improvement of short-circuit current density Jsc. In addition, in the traditional back contact of CdTe cell a small positive conduction band (? Ec} < 0.3eV) offset is necessary to reduce the forward current J0 as well as the recombination losses in the back contact interface. To achieve this goal a highly doped ZnTe: Cu extra layer was used as an electron reflector (ER) above back contact. Furthermore, this ER interface allows electron tunnelling by reducing the barrier height of the valence band which in turn leads to an improvement of open-circuit voltage and fill factor. The performance of the proposed cell was examined by varying thickness and doping concentration of Transparent Conducting Oxide (TCO) layer, window layer, absorber layer and finally ER layer. The simulated results of the proposed cell had shown that the open-circuit voltage (Voc) overcame the 1-volt barrier of CdTe cell with energy conversion efficiencies of 19.93 %. � 2019 IEEE.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo8679444
dc.identifier.doi10.1109/ECACE.2019.8679444
dc.identifier.scopus2-s2.0-85064660152
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85064660152&doi=10.1109%2fECACE.2019.8679444&partnerID=40&md5=37c5cdf6b6b8dc012290b745bf954914
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/24723
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.sourceScopus
dc.sourcetitle2nd International Conference on Electrical, Computer and Communication Engineering, ECCE 2019
dc.titleEffect of Cd1-xZnxS Window Layer Incorporation in CdTe Solar Cell by Numerical Simulationen_US
dc.typeConference Paperen_US
dspace.entity.typePublication
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