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Effects of uv irradiation and storage on the performance of inverted red quantum-dot light-emitting diodes

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dc.citedby4
dc.contributor.authorLuo Y.en_US
dc.contributor.authorWang J.en_US
dc.contributor.authorWang P.en_US
dc.contributor.authorMai C.en_US
dc.contributor.authorWang J.en_US
dc.contributor.authorYap B.K.en_US
dc.contributor.authorPeng J.en_US
dc.contributor.authorid57192920424en_US
dc.contributor.authorid57218204863en_US
dc.contributor.authorid57224370012en_US
dc.contributor.authorid57200967659en_US
dc.contributor.authorid57204097443en_US
dc.contributor.authorid26649255900en_US
dc.contributor.authorid7401958759en_US
dc.date.accessioned2023-05-29T09:07:24Z
dc.date.available2023-05-29T09:07:24Z
dc.date.issued2021
dc.description.abstractWe report the effects of ultraviolet (UV) irradiation and storage on the performance of ZnO-based inverted quantum-dot light-emitting diodes (QLEDs). The effects of UV irradiation on the electrical properties of ZnO nanoparticles (NPs) were investigated. We demonstrate that the charge balance was enhanced by improving the electron injection. The maximum external quantum efficiency (EQE) and power efficiency (PE) of QLEDs were increased by 26% and 143% after UV irradiation for 15 min. In addition, we investigated the storage stabilities of the inverted QLEDs. During the storage period, the electron current from ZnO gradually decreased, causing a reduction in the device current. However, the QLEDs demonstrated improvements in maximum EQE by 20.7% after two days of storage. Our analysis indicates that the suppression of exciton quenching at the interface of ZnO and quantum dots (QDs) during the storage period could result in the enhancement of EQE. This study provides a comprehension of the generally neglected factors, which could be conducive to the realization of high-efficiency and highly storage-stable practical applications. � 2021 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https:// creativecommons.org/licenses/by/ 4.0/).en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo1606
dc.identifier.doi10.3390/nano11061606
dc.identifier.issue6
dc.identifier.scopus2-s2.0-85108058770
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85108058770&doi=10.3390%2fnano11061606&partnerID=40&md5=a1b6a2290922c23a4359f2caf6f17e2b
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/26167
dc.identifier.volume11
dc.publisherMDPI AGen_US
dc.relation.ispartofAll Open Access, Gold, Green
dc.sourceScopus
dc.sourcetitleNanomaterials
dc.titleEffects of uv irradiation and storage on the performance of inverted red quantum-dot light-emitting diodesen_US
dc.typeArticleen_US
dspace.entity.typePublication
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