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Mechanical properties study of lead free solder joint material used in semiconductor packaging subjected to thermal condition

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dc.citedby0
dc.contributor.authorHarif M.N.en_US
dc.contributor.authorAhmad I.en_US
dc.contributor.authorid22634024000en_US
dc.contributor.authorid12792216600en_US
dc.date.accessioned2023-12-29T07:52:08Z
dc.date.available2023-12-29T07:52:08Z
dc.date.issued2010
dc.description.abstractThe effect of high temperature storage (HTS) on lead free solder joint material for ball grid array application using pull test method were studied in this paper. Some statistical analysis base on the pull test data also discussed. Three samples of different lead free solder joint material were selected in this experiment namely Sn3.8Ag0.7Cu (SAC387), Sn2.3Ag0.08Ni0.01Co (SANC), and Sn3.5Ag. After the thermal condition test, all the lead free solder joint material samples were tested using Dage 4000 pull test machine. Each pull test will be 5 units and each unit contain 8 balls. From all the samples, result shows that the mean pull strength for high temperature storage are 2847.66g, 2628.20g and 2613.79g for Sn3.5Ag, SANC and SAC387 respectively. Thus Sn3.5Ag shows a significantly better solder joint performance in terms of joint strength compare to SANC and SAC387. Hence, intermetallic compound (IMC) thicknesses were measured after cross-sectioning. Sample size for cross-sectioning was 3 units per read point, 2 balls per unit, and 3 maximum IMC peaks per ball and the measurement using high power scope of 100x and Image Analyzer software to measure the IMC thickness. For high temperature storage, result show that the mean IMC thicknesses for SAC387, SANC and Sn3.5Ag are 3.9139?m, 2.3111 ?m and 2.3931 ?m. It was found that IMC thickness for SANC and Sn3.5Ag does not show significant growth after high temperature storage but SAC387 demonstrated significant growth. Lower intermetallic thickness implies less brittle joint effect, thus from this part of study, better joint reliability is expected for the Sn3.5Ag solder system. In summary pull test method is feasible to be used in characterization in terms of solder joint strength of lead free solder joint material for semiconductor packaging. It also determined ball pull test results provide correlation of the IMC thickness and solder joint strength material. �2010 IEEE.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo5503049
dc.identifier.doi10.1109/ICEDSA.2010.5503049
dc.identifier.epage334
dc.identifier.scopus2-s2.0-77955288873
dc.identifier.spage331
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-77955288873&doi=10.1109%2fICEDSA.2010.5503049&partnerID=40&md5=632eb6991dc7d96f9f3bafd64bfcd8bc
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/30736
dc.pagecount3
dc.sourceScopus
dc.sourcetitle2010 International Conference on Electronic Devices, Systems and Applications, ICEDSA 2010 - Proceedings
dc.subjectLead free
dc.subjectPull test and IMC thicknesses
dc.subjectSolder joint
dc.subjectChip scale packages
dc.subjectIntermetallics
dc.subjectMaterials
dc.subjectMechanical properties
dc.subjectSemiconductor growth
dc.subjectSilver
dc.subjectSoldering alloys
dc.subjectSpheres
dc.subjectTesting
dc.subjectThermoelectric equipment
dc.subjectUnits of measurement
dc.subjectAfter high temperature
dc.subjectHigh temperature storage
dc.subjectHigh-power
dc.subjectImage analyzers
dc.subjectIMC thickness
dc.subjectIntermetallic compounds
dc.subjectIntermetallic thickness
dc.subjectJoint effect
dc.subjectJoint reliability
dc.subjectJoint strength
dc.subjectLead-Free
dc.subjectLead-free solder joint
dc.subjectPer unit
dc.subjectPull strength
dc.subjectSample sizes
dc.subjectSemiconductor packaging
dc.subjectSn-3.5Ag
dc.subjectSn3.5Ag solder
dc.subjectSolder joints
dc.subjectSolder-joint strength
dc.subjectStatistical analysis
dc.subjectTest data
dc.subjectTest machine
dc.subjectTest method
dc.subjectTest results
dc.subjectThermal condition
dc.subjectThermal condition tests
dc.subjectLead
dc.titleMechanical properties study of lead free solder joint material used in semiconductor packaging subjected to thermal conditionen_US
dc.typeConference paperen_US
dspace.entity.typePublication
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