Publication:
Sol-gel prepared Cu2ZnSnS4 (CZTS) semiconductor thin films: Role of solvent removal processing temperature

Simple item page
dc.citedby9
dc.contributor.authorAhmoum H.en_US
dc.contributor.authorChelvanathan P.en_US
dc.contributor.authorSu'ait M.S.en_US
dc.contributor.authorBoughrara M.en_US
dc.contributor.authorLi G.en_US
dc.contributor.authorGebauer R.en_US
dc.contributor.authorSopian K.en_US
dc.contributor.authorKerouad M.en_US
dc.contributor.authorAmin N.en_US
dc.contributor.authorWang Q.en_US
dc.contributor.authorid57200444252en_US
dc.contributor.authorid35766323200en_US
dc.contributor.authorid57223117728en_US
dc.contributor.authorid14036797900en_US
dc.contributor.authorid8508360000en_US
dc.contributor.authorid57205959220en_US
dc.contributor.authorid7003375391en_US
dc.contributor.authorid6701564709en_US
dc.contributor.authorid7102424614en_US
dc.contributor.authorid57199479547en_US
dc.date.accessioned2023-05-29T09:06:14Z
dc.date.available2023-05-29T09:06:14Z
dc.date.issued2021
dc.descriptionCarrier concentration; Copper compounds; Crystallinity; Crystallite size; Energy gap; Morphology; Semiconducting tin compounds; Sol-gel process; Sol-gels; Solar cells; Surface morphology; Zinc compounds; Condition; CZTS; Preheating temperature; Processing temperature; Role of solvents; Semiconductors thin films; Sol'gel; Solvent removal; Sulphuration; Thin-films; Thin filmsen_US
dc.description.abstractThe conditions under which thin films are deposited are the most important parameter determining the physical performance of devices. In this work, we present the effect of preheating temperatures under N2 ambient conditions on the quality of Cu2ZnSnS4 (CZTS) thin films. Herein we are interested in the structural, morphological, vibrational, optical and electrical characteristics of CZTS layers, synthesized using the sol-gel method. CZTS layers were deposited at preheating temperatures of 200 �C, 250 �C and 300 �C under N2 ambient atmosphere prior to a 1-h sulphuration process at 580 �C. XRD results confirm the dependence of the crystallite size on temperature. All the deposited layers are in stannite phase, confirmed by Raman spectroscopy, and the electrical properties show that all films obtained are p-type semiconductors with a carrier charge concentration of 4.06�9.48 � 1020 cm?3. CZTS films preheated at 300 �C show better crystallinity, larger grains, more suitable band gap, higher electrical conductivity and improved surface morphology compared to the rest of the thin films, which indicates that the method proposed here can be used to deposited high quality absorber layers of CZTS for solar cells applications. � 2021 Elsevier Ltden_US
dc.description.natureFinalen_US
dc.identifier.ArtNo105874
dc.identifier.doi10.1016/j.mssp.2021.105874
dc.identifier.scopus2-s2.0-85105312641
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85105312641&doi=10.1016%2fj.mssp.2021.105874&partnerID=40&md5=b1b4861a7537c24310c736c7427f9e8d
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/26033
dc.identifier.volume132
dc.publisherElsevier Ltden_US
dc.sourceScopus
dc.sourcetitleMaterials Science in Semiconductor Processing
dc.titleSol-gel prepared Cu2ZnSnS4 (CZTS) semiconductor thin films: Role of solvent removal processing temperatureen_US
dc.typeArticleen_US
dspace.entity.typePublication
Files
Collections
SCOPUS