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Taguchi optimization of a SOI-based lateral PIN photodiode using SiGe/Si multilayer quantum well

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dc.citedby1
dc.contributor.authorMenon P.S.en_US
dc.contributor.authorTasirin S.K.en_US
dc.contributor.authorAhmad I.en_US
dc.contributor.authorIslam S.en_US
dc.contributor.authorAbdullah S.F.en_US
dc.contributor.authorid57201289731en_US
dc.contributor.authorid55602329100en_US
dc.contributor.authorid12792216600en_US
dc.contributor.authorid58076315600en_US
dc.contributor.authorid14319069500en_US
dc.date.accessioned2023-12-29T07:45:26Z
dc.date.available2023-12-29T07:45:26Z
dc.date.issued2013
dc.description.abstractSilicon-on-insulator (SOI) based SiGe quantum well infrared pin photodiode has the potential of being a serious candidate for applications in sensing applications as well as in optical fiber communications. The objective of this paper is to optimize the process parameters for a SOI-based lateral PIN photodiode using SiGe/Si multilayer quantum well (MQW) to obtain high responsivity, frequency response, quantum efficiency and low transient time. An L9 array from Taguchi method was used to optimize the device design. Four process parameters were chosen, namely the intrinsic region length, photo-absorption layer thickness, the incident optical power and the bias voltage. Two noise factors i.e. the time and temperature of the n-well diffusion process were also used to make the device design insensitive to variation in selected fabrication parameters. ATHENA and ATLAS module from Silvaco Int. were used for the fabrication simulation and electrical characterization. The results obtained for responsivity, frequency response and transient time after the optimization approach were 0.87 A/W, 20 GHz and 1.75 x 10-11 respectively which correspond to the optimization value for the intrinsic region length of 6 ?m, photo-absorption layer thickness of 0.505 ?m, incident optical power of 0.5 mW/cm2and bias voltage of 3.5 V. As a conclusion, the optimum solution in achieving the desired high speed photodiode was successfully predicted using Taguchi optimization method. The percent of improvement for responsivity and frequency responses are 22.3% and 5.26% respectively.en_US
dc.description.natureFinalen_US
dc.identifier.epage361
dc.identifier.issue05/06/2023
dc.identifier.scopus2-s2.0-84881054614
dc.identifier.spage354
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84881054614&partnerID=40&md5=73e2db782a22650a2bd9c3a8f33d4a8e
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/30199
dc.identifier.volume7
dc.pagecount7
dc.publisherNational Institute of Optoelectronicsen_US
dc.sourceScopus
dc.sourcetitleOptoelectronics and Advanced Materials, Rapid Communications
dc.subjectATHENA
dc.subjectATLAS
dc.subjectPhotodetector device
dc.subjectTaguchi method
dc.subjectBias voltage
dc.subjectFrequency response
dc.subjectMultilayers
dc.subjectOptical fiber communication
dc.subjectOptical fiber fabrication
dc.subjectOptical fibers
dc.subjectPhotodiodes
dc.subjectSi-Ge alloys
dc.subjectSilicon on insulator technology
dc.subjectTaguchi methods
dc.subjectATHENA
dc.subjectATLAS
dc.subjectElectrical characterization
dc.subjectFabrication parameters
dc.subjectFabrication simulation
dc.subjectLateral PIN photodiodes
dc.subjectSilicon-on- insulators (SOI)
dc.subjectTaguchi optimization method
dc.subjectSemiconductor quantum wells
dc.titleTaguchi optimization of a SOI-based lateral PIN photodiode using SiGe/Si multilayer quantum wellen_US
dc.typeArticleen_US
dspace.entity.typePublication
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