Publication:
Modelling of 14NM gate length La2O3-based n-type MOSFET

dc.citedby2
dc.contributor.authorMah S.K.en_US
dc.contributor.authorAhmad I.en_US
dc.contributor.authorKer P.J.en_US
dc.contributor.authorNoor Faizah Z.A.en_US
dc.contributor.authorid57191706660en_US
dc.contributor.authorid12792216600en_US
dc.contributor.authorid37461740800en_US
dc.contributor.authorid56395444600en_US
dc.date.accessioned2023-05-29T06:13:30Z
dc.date.available2023-05-29T06:13:30Z
dc.date.issued2016
dc.description.abstractGate length shrinkage is still the widely used method in transistor downsizing. In view of this, the downsizing of Equivalent Oxide Thickness (EOT) is also of high importance as it is the main focus in the process. Therefore, various studies on Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) fabricated from high-k dielectric and metal gate have been reported till today. In this paper, a 14nm silicon based n-type MOSFET was virtually fabricated using Lanthanum Oxide (La2O3) on Titanium Silicide (TiSi2). ATHENA and ATLAS modules from SILVACO were used for process and device simulation respectively. The results from this work show that the threshold voltage, VTH, on-current, ION and off-current, IOFF are 0.208397 V, 4.80048 x 10-5 A/?m and 1.00402 x 10-7 A/?m respectively. Furthermore, it is demonstrated that the development of high-k/metal gate MOSFET is a promising prospect for high performance nanoscale transistors.en_US
dc.description.natureFinalen_US
dc.identifier.epage110
dc.identifier.issue4
dc.identifier.scopus2-s2.0-84992524312
dc.identifier.spage107
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84992524312&partnerID=40&md5=a1f736ce30dd370df2ab93425e914754
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/22933
dc.identifier.volume8
dc.publisherUniversiti Teknikal Malaysia Melakaen_US
dc.sourceScopus
dc.sourcetitleJournal of Telecommunication, Electronic and Computer Engineering
dc.titleModelling of 14NM gate length La2O3-based n-type MOSFETen_US
dc.typeArticleen_US
dspace.entity.typePublication
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