Publication: Feasibility study of Composite Field Effect Transistor (COMFET) in submicron devices
dc.citedby | 0 | |
dc.contributor.author | Farooq S.F.S. | en_US |
dc.contributor.author | Hamid F.A. | en_US |
dc.contributor.authorid | 24463565400 | en_US |
dc.contributor.authorid | 6603573875 | en_US |
dc.date.accessioned | 2023-12-28T08:57:45Z | |
dc.date.available | 2023-12-28T08:57:45Z | |
dc.date.issued | 2006 | |
dc.description.abstract | A linear transconductor is highly desirable in many applications such as continuous time filtering and ADC. In long channel devices where the I-V characteristic of the transistor follows the square law, COMFET circuit achieves linearity without the need to invoke small signal. This paper studies the feasibility of implementing COMFET at submicron length where transistor do not follow square law and a variety of second order effects degrade the linearity of COMFET. The simulated THD at 1 kHz of COMFET and other transconductors are compared. | en_US |
dc.description.nature | Final | en_US |
dc.identifier.ArtNo | 4339306 | |
dc.identifier.doi | 10.1109/SCORED.2006.4339306 | |
dc.identifier.epage | 52 | |
dc.identifier.scopus | 2-s2.0-46849105265 | |
dc.identifier.spage | 49 | |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-46849105265&doi=10.1109%2fSCORED.2006.4339306&partnerID=40&md5=5a0a953d2608679aa52cca30fec7254b | |
dc.identifier.uri | https://irepository.uniten.edu.my/handle/123456789/29817 | |
dc.pagecount | 3 | |
dc.source | Scopus | |
dc.sourcetitle | SCOReD 2006 - Proceedings of 2006 4th Student Conference on Research and Development "Towards Enhancing Research Excellence in the Region" | |
dc.subject | COMFET | |
dc.subject | Linear composite MOSFET | |
dc.subject | Linear transconductor | |
dc.subject | Small signal | |
dc.subject | Submicron transconductor | |
dc.subject | Decision making | |
dc.subject | Field effect transistors | |
dc.subject | Filtration | |
dc.subject | Linearization | |
dc.subject | Photoacoustic effect | |
dc.subject | Planning | |
dc.subject | Resource allocation | |
dc.subject | Students | |
dc.subject | Transconductance | |
dc.subject | Continuous-time (CT) | |
dc.subject | Feasibility studies | |
dc.subject | field effects | |
dc.subject | I V characteristics | |
dc.subject | Linear transconductor | |
dc.subject | Long channel devices | |
dc.subject | Research and development | |
dc.subject | Second order effects | |
dc.subject | Small signals | |
dc.subject | Sub micron devices | |
dc.subject | Submicron length | |
dc.subject | Transconductors | |
dc.subject | Research and development management | |
dc.title | Feasibility study of Composite Field Effect Transistor (COMFET) in submicron devices | en_US |
dc.type | Conference paper | en_US |
dspace.entity.type | Publication |