Publication:
Feasibility study of Composite Field Effect Transistor (COMFET) in submicron devices

dc.citedby0
dc.contributor.authorFarooq S.F.S.en_US
dc.contributor.authorHamid F.A.en_US
dc.contributor.authorid24463565400en_US
dc.contributor.authorid6603573875en_US
dc.date.accessioned2023-12-28T08:57:45Z
dc.date.available2023-12-28T08:57:45Z
dc.date.issued2006
dc.description.abstractA linear transconductor is highly desirable in many applications such as continuous time filtering and ADC. In long channel devices where the I-V characteristic of the transistor follows the square law, COMFET circuit achieves linearity without the need to invoke small signal. This paper studies the feasibility of implementing COMFET at submicron length where transistor do not follow square law and a variety of second order effects degrade the linearity of COMFET. The simulated THD at 1 kHz of COMFET and other transconductors are compared.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo4339306
dc.identifier.doi10.1109/SCORED.2006.4339306
dc.identifier.epage52
dc.identifier.scopus2-s2.0-46849105265
dc.identifier.spage49
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-46849105265&doi=10.1109%2fSCORED.2006.4339306&partnerID=40&md5=5a0a953d2608679aa52cca30fec7254b
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/29817
dc.pagecount3
dc.sourceScopus
dc.sourcetitleSCOReD 2006 - Proceedings of 2006 4th Student Conference on Research and Development "Towards Enhancing Research Excellence in the Region"
dc.subjectCOMFET
dc.subjectLinear composite MOSFET
dc.subjectLinear transconductor
dc.subjectSmall signal
dc.subjectSubmicron transconductor
dc.subjectDecision making
dc.subjectField effect transistors
dc.subjectFiltration
dc.subjectLinearization
dc.subjectPhotoacoustic effect
dc.subjectPlanning
dc.subjectResource allocation
dc.subjectStudents
dc.subjectTransconductance
dc.subjectContinuous-time (CT)
dc.subjectFeasibility studies
dc.subjectfield effects
dc.subjectI V characteristics
dc.subjectLinear transconductor
dc.subjectLong channel devices
dc.subjectResearch and development
dc.subjectSecond order effects
dc.subjectSmall signals
dc.subjectSub micron devices
dc.subjectSubmicron length
dc.subjectTransconductors
dc.subjectResearch and development management
dc.titleFeasibility study of Composite Field Effect Transistor (COMFET) in submicron devicesen_US
dc.typeConference paperen_US
dspace.entity.typePublication
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