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Comparative high-K material gate spacer impact in DG-finfet parameter variations between two structures

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dc.citedby1
dc.contributor.authorRoslan A.F.en_US
dc.contributor.authorSalehuddin F.en_US
dc.contributor.authorZain A.S.M.en_US
dc.contributor.authorKaharudin K.E.en_US
dc.contributor.authorAhmad I.en_US
dc.contributor.authorHazura H.en_US
dc.contributor.authorHanim A.R.en_US
dc.contributor.authorIdris S.K.en_US
dc.contributor.authorid57203514087en_US
dc.contributor.authorid36239165300en_US
dc.contributor.authorid55925762500en_US
dc.contributor.authorid56472706900en_US
dc.contributor.authorid12792216600en_US
dc.contributor.authorid35108985200en_US
dc.contributor.authorid57193616206en_US
dc.contributor.authorid57202632295en_US
dc.date.accessioned2023-05-29T07:25:50Z
dc.date.available2023-05-29T07:25:50Z
dc.date.issued2019
dc.description.abstractThis paper investigates the impact of the high-K material gate spacer on short channel effects (SCEs) for the 16 nm double-gate FinFET (DG-FinFET), where depletion-layer widths of the source-drain corresponds to the channel length. Virtual fabrication process along with design modification throughout the study and its electrical characterization is implemented and significant improvement is shown towards the altered structure design whereby in terms of the ratio of drive current against the leakage current (ION/IOFF ratio), all three materials tested being S3N4, HfO2 and TiO2 increases from the respective 60.90, 80.70 and 84.77 to 84.77, 91.54 and 92.69. That being said, the incremental in ratio has satisfied the incremental on the drive current as well as decreases the leakage current. Threshold voltage (VTH) for all dielectric materials have also satisfy the minimum requirement predicted by the International Technology Roadmap Semiconductor (ITRS) 2013 for which is at 0.461�12.7% V. Based on the results obtained, the high-K materials have shown a significant improvement, specifically after the modifications towards the Source/Drain. Compared to the initial design made, TiO2 has improved by 12.94% after the alteration made in terms of the overall ION and IOFF performances through the ION/IOFF ratio value obtained, as well as meeting the required value for VTH obtained at 0.464V. The ION from high-K materials has proved to meet the minimum requirement by ITRS 2013 for low performance Multi-Gate technology. � 2019 Institute of Advanced Engineering and Science. All rights reserved.en_US
dc.description.natureFinalen_US
dc.identifier.doi10.11591/ijeecs.v14.i2.pp573-580
dc.identifier.epage580
dc.identifier.issue2
dc.identifier.scopus2-s2.0-85062500017
dc.identifier.spage573
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85062500017&doi=10.11591%2fijeecs.v14.i2.pp573-580&partnerID=40&md5=66932be9b591b05e7117add38a1d340f
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/24685
dc.identifier.volume14
dc.publisherInstitute of Advanced Engineering and Scienceen_US
dc.relation.ispartofAll Open Access, Hybrid Gold
dc.sourceScopus
dc.sourcetitleIndonesian Journal of Electrical Engineering and Computer Science
dc.titleComparative high-K material gate spacer impact in DG-finfet parameter variations between two structuresen_US
dc.typeArticleen_US
dspace.entity.typePublication
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