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Statistical modeling of solar cell using Taguchi method and TCAD tool

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dc.citedby3
dc.contributor.authorBahrudin M.S.en_US
dc.contributor.authorAbdullah S.F.en_US
dc.contributor.authorAhmad I.en_US
dc.contributor.authorid55603412800en_US
dc.contributor.authorid14319069500en_US
dc.contributor.authorid12792216600en_US
dc.date.accessioned2023-12-29T07:46:22Z
dc.date.available2023-12-29T07:46:22Z
dc.date.issued2012
dc.description.abstractThis paper focuses on optimizing silicon based solar cell fabrication using Taguchi Optimization Method (TOM). Optimization focused on 3 parameters namely doping concentration of boron, creating phosphorus PN-junction and energy used for ion-implantation with 2 noise factors, Diffuse time and diffuse temperature. The aim is to have a shallow junction in order to decrease the recombination process but higher fill factor (FF) for better efficiency. Fabricating are done in computer simulation environment by Silvaco TCAD software that also conducting an electrical testing for measurement. Each factor (product from the parameters through TOM) has 2 levels of best values taken from the previous researches. In this research, L8 orthogonal array consists of 8 set of different combination of experiment has been done. Optimized values are analyzed by finding Signal to Noise Ratio (SNR) of each experiment and applied it on Larger the Better (LTB) for highest FF and Smaller the Better (STB) for shallowest junction depth. Result reveal that boron at concentration of 5.0�10 15 cm-3, phosphorus at concentration of 2.0�10 16 cm-3, and energy at 10 keV gave a result of 0.3 um ? 0.5 um for junction depth and stable FF value of 0.8 at any noise factor contributing efficiency of 15% to 16%. As a conclusion, TOM has achieved predicting the best solution for optimizing silicon solar cell fabrication. � 2012 IEEE.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo6417073
dc.identifier.doi10.1109/SMElec.2012.6417073
dc.identifier.epage5
dc.identifier.scopus2-s2.0-84874136502
dc.identifier.spage1
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84874136502&doi=10.1109%2fSMElec.2012.6417073&partnerID=40&md5=ddff966877bd5577b3d5a20fd74438cc
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/30290
dc.pagecount4
dc.sourceScopus
dc.sourcetitle2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings
dc.subjection-implantation and Silvaco TCAD software
dc.subjectPN-junction
dc.subjectSolar cell
dc.subjectTaguchi Optimization Method
dc.subjectBoron
dc.subjectComputer simulation
dc.subjectExperiments
dc.subjectOptimization
dc.subjectPhosphorus
dc.subjectSemiconductor doping
dc.subjectSignal to noise ratio
dc.subjectSilicon solar cells
dc.subjectSolar cells
dc.subjectTaguchi methods
dc.subjectTesting
dc.subjectBest value
dc.subjectDoping concentration
dc.subjectElectrical testing
dc.subjectFill factor
dc.subjectJunction depth
dc.subjectNoise factor
dc.subjectOrthogonal array
dc.subjectP-n junction
dc.subjectRecombination process
dc.subjectShallow junction
dc.subjectSilicon-based
dc.subjectSilvaco
dc.subjectSimulation environment
dc.subjectSolar cell fabrication
dc.subjectStatistical modeling
dc.subjectTaguchi optimization method
dc.subjectTCAD software
dc.subjectSemiconductor junctions
dc.titleStatistical modeling of solar cell using Taguchi method and TCAD toolen_US
dc.typeConference paperen_US
dspace.entity.typePublication
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