Publication:
Influence of pulsed Nd:YAG laser oscillation energy on silicon wafer texturing for enhanced absorption in photovoltaic cells

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dc.citedby8
dc.contributor.authorHuda Abdul Razak N.en_US
dc.contributor.authorAmin N.en_US
dc.contributor.authorSajedur Rahman K.en_US
dc.contributor.authorPasupuleti J.en_US
dc.contributor.authorMd. Akhtaruzzamanen_US
dc.contributor.authorSopian K.en_US
dc.contributor.authorAlbaqami M.D.en_US
dc.contributor.authorMohamed Tighezza A.en_US
dc.contributor.authorAlothman Z.A.en_US
dc.contributor.authorSillanp�� M.en_US
dc.contributor.authorid54397656800en_US
dc.contributor.authorid7102424614en_US
dc.contributor.authorid56348138800en_US
dc.contributor.authorid11340187300en_US
dc.contributor.authorid57214121369en_US
dc.contributor.authorid7003375391en_US
dc.contributor.authorid57217990301en_US
dc.contributor.authorid6602759178en_US
dc.contributor.authorid35085715800en_US
dc.contributor.authorid7101751659en_US
dc.date.accessioned2024-10-14T03:18:13Z
dc.date.available2024-10-14T03:18:13Z
dc.date.issued2023
dc.description.abstractThe influence of the Nd:YAG laser's oscillation energy on creating textured surfaces on silicon wafers is investigated in this study. The silicon wafer surfaces were directly ablated by a pulsed Nd:YAG laser beam to create the texturing, which was then examined using UV�Vis spectroscopy, AFM and FESEM to determine its characteristics. The reflectance was reduced up to 15% after laser texturing of multicrystalline silicon wafers. The silicon surface suffers from structural defects and a laser damage layer as a result of the laser texturing process, which in turn has an effect on the lifespan of the photo-generated carriers. To compensate for the laser damage layer, the silicon surface was cleaned with diluted KOH (15%) to remove undesirable particles and the oxide layer. Surface roughness and reflectance in silicon solar cells were changed depending on the laser oscillation energy utilized for texturing. The roughness and reflectance were measured using AFM and UV�Vis, respectively. The laser oscillation energy of 84 J/p had the highest average roughness of 0.2104 m and the lowest reflectance of 5%. As a result, standard silicon solar cell devices revealed photovoltaic conversion efficiencies of roughly 7.5% and 5.0% for laser-textured grid and one-dimensional line patterns, respectively. � 2023 The Authorsen_US
dc.description.natureFinalen_US
dc.identifier.ArtNo106435
dc.identifier.doi10.1016/j.rinp.2023.106435
dc.identifier.scopus2-s2.0-85152519320
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85152519320&doi=10.1016%2fj.rinp.2023.106435&partnerID=40&md5=bb6c9f5d4ccdae87f313e23b4ba89fe8
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/34163
dc.identifier.volume48
dc.publisherElsevier B.V.en_US
dc.relation.ispartofAll Open Access
dc.relation.ispartofGold Open Access
dc.sourceScopus
dc.sourcetitleResults in Physics
dc.subjectCrystalline silicon solar cells
dc.subjectEfficiency
dc.subjectNd:YAG laser
dc.subjectReflectance
dc.subjectTexturing
dc.titleInfluence of pulsed Nd:YAG laser oscillation energy on silicon wafer texturing for enhanced absorption in photovoltaic cellsen_US
dc.typeArticleen_US
dspace.entity.typePublication
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