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Enhancement in structural and optical properties of copper tin sulphide (CTS) thin films via sulphurization process

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dc.citedby1
dc.contributor.authorHossain E.S.en_US
dc.contributor.authorChelvanathan P.en_US
dc.contributor.authorBais B.en_US
dc.contributor.authorAzmi N.en_US
dc.contributor.authorShahahmadi S.A.en_US
dc.contributor.authorYussof Y.en_US
dc.contributor.authorSopian K.en_US
dc.contributor.authorAmin N.en_US
dc.contributor.authorid57196058952en_US
dc.contributor.authorid35766323200en_US
dc.contributor.authorid9638472600en_US
dc.contributor.authorid36715913200en_US
dc.contributor.authorid55567116600en_US
dc.contributor.authorid6504495106en_US
dc.contributor.authorid7003375391en_US
dc.contributor.authorid7102424614en_US
dc.date.accessioned2023-05-29T09:37:24Z
dc.date.available2023-05-29T09:37:24Z
dc.date.issued2022
dc.descriptionCopper compounds; IV-VI semiconductors; Layered semiconductors; Optical properties; Thin film solar cells; Thin films; Tin compounds; Cu2SnS3 (copper tin sulphide); Device performance; Polycrystalline copper; Secondary phase; Structural and optical properties; Sulfide thin films; Sulphurization; Sulphurization time; Thin-films; Tin sulfide; Sulfur compoundsen_US
dc.description.abstractIn this letter, the effects of sulphurization time on the material properties of CTS thin film and concomitant device performance were investigated. A specified range of sulphurization time from 1 to 3 hours were carried out. Structural analyses confirmed that polycrystalline CTS were apparent in all samples prepared, with an intermediate secondary phase of Cu4Sn7S16 which then decomposes to Cu2SnS3 and Sn2S3 as the sulphurization duration reached 3 h. The relative intensity of pure phase CTS was also higher in samples subjected to 3 h sulphurization duration. The FWHM was found to decrease from about 0.15 to 0.11 as the sulphurization time was extended from 1 h to 3 h. Both structural and vibrational analysis confirms that monoclinic phase CTS with a preferential orientation in (?131) direction at the diffraction angle of 28.3� was evident in all samples produced. Furthermore, sulphurization time of 3 h resulted in CTS films with the desired direct optical bandgap of 0.9 eV and largest grains. However, the presence of considerable surface voids and substantial amount of Sn2S3 secondary phase were also detected in the sample. Nonetheless, CTS photovoltaic device fabricated using 3 h sulphurization duration recorded the highest efficiency of 0.96% with Voc = 147 mV, Jsc = 19.08 mA/cm2, and FF = 34.27%. � 2022 Elsevier Ltden_US
dc.description.natureFinalen_US
dc.identifier.ArtNo106496
dc.identifier.doi10.1016/j.mssp.2022.106496
dc.identifier.scopus2-s2.0-85123896641
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85123896641&doi=10.1016%2fj.mssp.2022.106496&partnerID=40&md5=351f64b9cf4941b5eb5e18c4a9e27519
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/26871
dc.identifier.volume143
dc.publisherElsevier Ltden_US
dc.sourceScopus
dc.sourcetitleMaterials Science in Semiconductor Processing
dc.titleEnhancement in structural and optical properties of copper tin sulphide (CTS) thin films via sulphurization processen_US
dc.typeArticleen_US
dspace.entity.typePublication
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