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Optimization of process parameters for threshold voltage and leakage current based on taguchi method

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dc.contributor.authorNoor Faizah Z.A.en_US
dc.contributor.authorAhmad I.en_US
dc.contributor.authorKer P.J.en_US
dc.contributor.authorMenon P.S.en_US
dc.contributor.authorAfifah Maheran A.H.en_US
dc.contributor.authorMah S.K.en_US
dc.contributor.authorid56395444600en_US
dc.contributor.authorid12792216600en_US
dc.contributor.authorid37461740800en_US
dc.contributor.authorid57201289731en_US
dc.contributor.authorid36570222300en_US
dc.contributor.authorid57191706660en_US
dc.date.accessioned2023-05-29T06:56:32Z
dc.date.available2023-05-29T06:56:32Z
dc.date.issued2018
dc.description.abstractIn this study, the effect of process parameters on the threshold voltage (Vth) and leakage current (Ileak) were explored and the optimization of these parameters were carried out using the Taguchi method. The virtual device was initially constructed using ATHENA and ATLAS environment in Silvaco Technology Computer Aided Design (TCAD) tools. The simulation studies were directed under four varying process parameters, which are Vt adjust implantation dose, the halo tiling angle, the S/D implantation dose and the compensation implantation dose. The L9 Orthogonal Array (OA), the signal-to-noise ratio (SNR), and the analysis of variance (ANOVA) were used to study the performance characteristics and to gain an optimum combination of parameter settings. It was revealed that the Vt adjust implantation dose was the most influential parameter on the Vth and Ileak. Furthermore, it also improves the device performance. The result of Vth complied with the projections made by the International Technology Roadmap for Semiconductors (ITRS). � 2018 Universiti Teknikal Malaysia Melaka. All Rights Reserved.en_US
dc.description.natureFinalen_US
dc.identifier.epage146
dc.identifier.issue2-Jul
dc.identifier.scopus2-s2.0-85052023014
dc.identifier.spage143
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85052023014&partnerID=40&md5=44c4c5e695e2e5d29f97d54ee5b42e6b
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/24183
dc.identifier.volume10
dc.publisherUniversiti Teknikal Malaysia Melakaen_US
dc.sourceScopus
dc.sourcetitleJournal of Telecommunication, Electronic and Computer Engineering
dc.titleOptimization of process parameters for threshold voltage and leakage current based on taguchi methoden_US
dc.typeArticleen_US
dspace.entity.typePublication
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