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Optimization of p-type emitter thickness for GaSb-based thermophotovoltaic cells

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dc.citedby3
dc.contributor.authorRashid W.E.en_US
dc.contributor.authorKer P.J.en_US
dc.contributor.authorJamaludin M.Z.en_US
dc.contributor.authorRahman N.A.en_US
dc.contributor.authorKhamis M.A.en_US
dc.contributor.authorid57204586520en_US
dc.contributor.authorid37461740800en_US
dc.contributor.authorid57216839721en_US
dc.contributor.authorid57207729143en_US
dc.contributor.authorid57204588662en_US
dc.date.accessioned2023-05-29T06:50:52Z
dc.date.available2023-05-29T06:50:52Z
dc.date.issued2018
dc.descriptionAntimony compounds; Cells; Computer software; Cytology; Efficiency; III-V semiconductors; Open circuit voltage; Carnot efficiency; Electrical characteristic; emitter thickness; Gallium antimonide; High output power; Illumination conditions; Thermophoto voltaic cells; Thermophotovoltaics; Gallium compoundsen_US
dc.description.abstractThermophotovoltaic (TPV) cells that convert thermal heat directly into electricity are attracting attention as they potentially produce high output power densities. Owing to its capability to convert with a Carnot efficiency, an optimization of these cells is essential to further enhance their performance and efficiency. This paper focuses on the optimization of p-type emitter thickness of Gallium Antimonide (GaSb) based TPV cell using Silvaco TCAD simulation software. The simulation works in this paper were validated by having a good agreement with those from the experimental work in terms of the electrical characteristics and efficiency of the GaSb TPV cell. Further simulation was done with different p-type emitter thicknesses ranging from 0.15 ?m to 1.20 ?m, It was demonstrated that the open circuit voltage (Voc) of the cell increases while the short-circuit current density (Jsc) decreases with increasing p-type emitter thickness. Since the rate of increasing Voc is faster than that of decreasing Jsc, higher maximum power efficiency was obtained at an optimum thickness of 0.85 ?m. It was found that, under AM1.5 illumination condition, an increment of power efficiency from 5.91 % to 6.63 % was achieved when increasing p-type emitter thickness from 0.15 ?m to 0.85 ?m. � 2018 IEEE.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo8481305
dc.identifier.doi10.1109/SMELEC.2018.8481305
dc.identifier.epage112
dc.identifier.scopus2-s2.0-85056251256
dc.identifier.spage109
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85056251256&doi=10.1109%2fSMELEC.2018.8481305&partnerID=40&md5=a1e0ea8bfbbf4488729105d87ebfc322
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/23664
dc.identifier.volume2018-August
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.sourceScopus
dc.sourcetitleIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
dc.titleOptimization of p-type emitter thickness for GaSb-based thermophotovoltaic cellsen_US
dc.typeConference Paperen_US
dspace.entity.typePublication
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