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Effects of Cr doping in the structural and optoelectronic properties of Cu2ZnSnS4 (CZTS) thin film by magnetron co-sputtering

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dc.citedby18
dc.contributor.authorSapeli M.M.I.en_US
dc.contributor.authorFerdaous M.T.en_US
dc.contributor.authorShahahmadi S.A.en_US
dc.contributor.authorSopian K.en_US
dc.contributor.authorChelvanathan P.en_US
dc.contributor.authorAmin N.en_US
dc.contributor.authorid57201282111en_US
dc.contributor.authorid55567613100en_US
dc.contributor.authorid55567116600en_US
dc.contributor.authorid7003375391en_US
dc.contributor.authorid35766323200en_US
dc.contributor.authorid7102424614en_US
dc.date.accessioned2023-05-29T06:51:55Z
dc.date.available2023-05-29T06:51:55Z
dc.date.issued2018
dc.descriptionChromium; Copper compounds; Defects; Magnetrons; Semiconductor doping; Sputtering; Chromium concentration; Co-sputtering techniques; Cr-doping; CZTS; Magnetron co-sputtering; Optoelectronic; Optoelectronic properties; Valence-band maximums; Tin compoundsen_US
dc.description.abstractIn this letter, we report the structural and optoelectronic properties of chromium-doped Cu2ZnSnS4 (CZTS:Cr) deposited by co-sputtering technique. Addition of chromium was observed to deteriorate the Cu2ZnSnS4 crystallinity as well as inducing the growth of cubic-ZnCr2S4 secondary phase. Grain size as large as 0.5 �m was observed for the doped sample. Bandgap was found to vary (1.51�1.70 eV), whereas the deep level defect state was calculated to be positioned at 0.20�0.33 eV above the valence band maximum (VBM) depending on the chromium concentration. � 2018en_US
dc.description.natureFinalen_US
dc.identifier.doi10.1016/j.matlet.2018.03.056
dc.identifier.epage25
dc.identifier.scopus2-s2.0-85044030222
dc.identifier.spage22
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85044030222&doi=10.1016%2fj.matlet.2018.03.056&partnerID=40&md5=333a93ab87ab78c85dae06a021f0a665
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/23798
dc.identifier.volume221
dc.publisherElsevier B.V.en_US
dc.sourceScopus
dc.sourcetitleMaterials Letters
dc.titleEffects of Cr doping in the structural and optoelectronic properties of Cu2ZnSnS4 (CZTS) thin film by magnetron co-sputteringen_US
dc.typeArticleen_US
dspace.entity.typePublication
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