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Optoelectronic properties of electron beam-deposited NiOx thin films for solar cell application

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dc.citedby20
dc.contributor.authorHasan A.K.M.en_US
dc.contributor.authorSobayel K.en_US
dc.contributor.authorRaifuku I.en_US
dc.contributor.authorIshikawa Y.en_US
dc.contributor.authorShahiduzzaman M.en_US
dc.contributor.authorNour M.en_US
dc.contributor.authorSindi H.en_US
dc.contributor.authorMoria H.en_US
dc.contributor.authorRawa M.en_US
dc.contributor.authorSopian K.en_US
dc.contributor.authorAmin N.en_US
dc.contributor.authorAkhtaruzzaman M.en_US
dc.contributor.authorid57200133780en_US
dc.contributor.authorid57194049079en_US
dc.contributor.authorid57188706683en_US
dc.contributor.authorid57650074000en_US
dc.contributor.authorid55640096500en_US
dc.contributor.authorid54783088200en_US
dc.contributor.authorid57188627799en_US
dc.contributor.authorid36617578600en_US
dc.contributor.authorid55290678700en_US
dc.contributor.authorid7003375391en_US
dc.contributor.authorid7102424614en_US
dc.contributor.authorid57195441001en_US
dc.date.accessioned2023-05-29T08:09:49Z
dc.date.available2023-05-29T08:09:49Z
dc.date.issued2020
dc.description.abstractThe fabrication of highly efficient nickel oxide (NiOx) thin film for optoelectronic devices is a challenging task because optoelectronic properties are considerably influenced by deposition technique and film thickness. The effect of thickness on the film properties of electron beam�physical vapour-deposited NiOx thin film has been investigated in this work. The influence of post-annealing treatment on the optoelectronic properties of the film was compared with that of the as-deposited one. Optical transparency gradually decreased upon the successive increment in thickness of the as-deposited and annealed films. The surface roughness of as-deposited films increased linearly with the increase in film thickness, but this behaviour was altered in post-annealed films. Spherical grains with high packing density were observed on the as-deposited films, but the grain size was altered substantially on the post-annealed films. The annealed films presented a higher work function than their corresponding as-deposited films. This work presents important insights into the design of photovoltaic devices with an effective deposition process, including a high material utilisation. Moreover, an attempt of fabricating inverted perovskite solar cell on as-deposited and annealing NiOx film as hole transporting material exhibited power conversion efficiency of 11.98% and 12.28%, individually. It was noticed that the high temperature annealing on NiOx film had a very little impact on the comparative photovoltaic performance of aforementioned PSC devices. � 2020 The Authorsen_US
dc.description.natureFinalen_US
dc.identifier.ArtNo103122
dc.identifier.doi10.1016/j.rinp.2020.103122
dc.identifier.scopus2-s2.0-85084731645
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85084731645&doi=10.1016%2fj.rinp.2020.103122&partnerID=40&md5=09450bc5fe99cf47862f1ee4fd00defc
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/25471
dc.identifier.volume17
dc.publisherElsevier B.V.en_US
dc.relation.ispartofAll Open Access, Gold
dc.sourceScopus
dc.sourcetitleResults in Physics
dc.titleOptoelectronic properties of electron beam-deposited NiOx thin films for solar cell applicationen_US
dc.typeArticleen_US
dspace.entity.typePublication
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