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Preparation and evaluation of Zn(O,S) thin film layer by sulfurization method

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dc.citedby3
dc.contributor.authorBahrudin M.S.en_US
dc.contributor.authorArsad A.Z.en_US
dc.contributor.authorAbdullah S.F.en_US
dc.contributor.authorAzman N.I.en_US
dc.contributor.authorChau C.F.en_US
dc.contributor.authorAhmad I.en_US
dc.contributor.authorAdini W.S.W.en_US
dc.contributor.authorMahmood Zuhdi A.W.en_US
dc.contributor.authorWan Abdullah W.S.en_US
dc.contributor.authorid55603412800en_US
dc.contributor.authorid56926685200en_US
dc.contributor.authorid14319069500en_US
dc.contributor.authorid56104480900en_US
dc.contributor.authorid25824209000en_US
dc.contributor.authorid12792216600en_US
dc.contributor.authorid58315812200en_US
dc.contributor.authorid56589966300en_US
dc.contributor.authorid58175300700en_US
dc.date.accessioned2024-10-14T03:17:42Z
dc.date.available2024-10-14T03:17:42Z
dc.date.issued2023
dc.description.abstractIn this paper, we propose a method of incorporating sulfur on the ZnO film surface, which can effectively alter the properties of the ZnO. Through sulfurization, a ZnS cubic crystal structure is formed in the ZnO film, with the ZnS peak increasing as the sulfur weight increases. This approach may pave the way for the successful production of Zn(O,S) film which may suit as an alternative buffer layer for CIGS solar cell structure. � 2023 Elsevier B.V.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo134697
dc.identifier.doi10.1016/j.matlet.2023.134697
dc.identifier.scopus2-s2.0-85161978842
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85161978842&doi=10.1016%2fj.matlet.2023.134697&partnerID=40&md5=7e83b81f7da58b8c91573c9ef1f93aa3
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/34028
dc.identifier.volume349
dc.publisherElsevier B.V.en_US
dc.sourceScopus
dc.sourcetitleMaterials Letters
dc.subjectSolar energy materials
dc.subjectSputtering
dc.subjectStructural
dc.subjectThin films
dc.subjectBuffer layers
dc.subjectCrystal structure
dc.subjectFilm preparation
dc.subjectII-VI semiconductors
dc.subjectMetallic films
dc.subjectSolar cells
dc.subjectSolar energy
dc.subjectSulfur
dc.subjectZinc oxide
dc.subjectZinc sulfide
dc.subjectFilm surfaces
dc.subjectProperty
dc.subjectS thin films
dc.subjectSolar energy materials
dc.subjectSputtering
dc.subjectStructural
dc.subjectSulphurization
dc.subjectThin film layers
dc.subjectThin-films
dc.subjectZnO films
dc.subjectThin films
dc.titlePreparation and evaluation of Zn(O,S) thin film layer by sulfurization methoden_US
dc.typeArticleen_US
dspace.entity.typePublication
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