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Annealing temperature assisted microstructural and optoelectrical properties of CdSe thin film grown by RF magnetron sputtering

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dc.citedby13
dc.contributor.authorRosly H.N.en_US
dc.contributor.authorRahman K.S.en_US
dc.contributor.authorHarif M.N.en_US
dc.contributor.authorDoroody C.en_US
dc.contributor.authorIsah M.en_US
dc.contributor.authorMisran H.en_US
dc.contributor.authorAmin N.en_US
dc.contributor.authorid36873451800en_US
dc.contributor.authorid56348138800en_US
dc.contributor.authorid22634024000en_US
dc.contributor.authorid56905467200en_US
dc.contributor.authorid57219626175en_US
dc.contributor.authorid6506899840en_US
dc.contributor.authorid7102424614en_US
dc.date.accessioned2023-05-29T08:06:53Z
dc.date.available2023-05-29T08:06:53Z
dc.date.issued2020
dc.descriptionAnnealing; Borosilicate glass; Carrier concentration; Energy gap; II-VI semiconductors; Magnetron sputtering; Optical properties; Selenium compounds; Substrates; Thin film solar cells; Thin films; Vacuum furnaces; X ray diffraction; Annealing temperatures; Borosilicate glass substrates; Hall effect measurement; Optoelectrical properties; Preferred orientations; Radio frequency magnetron sputtering; rf-Magnetron sputtering; Solar-cell applications; Cadmium compoundsen_US
dc.description.abstractCadmium selenide (CdSe) thin films are widely used in electronic devices as well as a potential window material in solar cell applications. In this study, 100 nm CdSe thin films were grown on borosilicate glass substrates by using Radio Frequency (RF) magnetron sputtering technique at room temperature (25 �C). Deposited films were annealed in a vacuum furnace at 100 �C, 200 �C, 300 �C, 400 �C and 500 �C for 10 min, respectively. In-depth analysis of the microstructural and optoelectrical properties of annealed films were performed using X-ray diffraction (XRD), UV�Vis spectrometry and Hall Effect measurements. From XRD results, the films illustrated hexagonal structure with preferred orientation (002) at 2? = 24.12�. UV�Vis study indicated that the transmission ranges were from 75% to over 85% for annealed samples and the calculated optical band gap was in the range 1.65 eV�1.73 eV. Optical properties demonstrated that CdSe had the potential to be incorporated as a window layer in solar cells. Meanwhile, the electrical measurements showed n-type conductivity with the carrier concentration of 1014 cm?3 for all the annealed films. The optimized results recommend sputtered CdSe thin films annealed at 400 �C as a possible window layer to the Cd-based solar cells. � 2020 Elsevier Ltden_US
dc.description.natureFinalen_US
dc.identifier.ArtNo106716
dc.identifier.doi10.1016/j.spmi.2020.106716
dc.identifier.scopus2-s2.0-85094322571
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85094322571&doi=10.1016%2fj.spmi.2020.106716&partnerID=40&md5=8436dd1d9a8ad42b13ea767c32fef117
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/25125
dc.identifier.volume148
dc.publisherAcademic Pressen_US
dc.sourceScopus
dc.sourcetitleSuperlattices and Microstructures
dc.titleAnnealing temperature assisted microstructural and optoelectrical properties of CdSe thin film grown by RF magnetron sputteringen_US
dc.typeArticleen_US
dspace.entity.typePublication
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