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Effect of zinc doping on the optoelectronic properties of cadmium sulphide (CdS) thin films deposited by chemical bath deposition by utilising an alternative sulphur precursor

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dc.citedby14
dc.contributor.authorMunna F.T.en_US
dc.contributor.authorChelvanathan P.en_US
dc.contributor.authorSobayel K.en_US
dc.contributor.authorNurhafiza K.en_US
dc.contributor.authorSarkar D.K.en_US
dc.contributor.authorNour M.en_US
dc.contributor.authorSindi H.en_US
dc.contributor.authorRawa M.en_US
dc.contributor.authorSopian K.en_US
dc.contributor.authorAmin N.en_US
dc.contributor.authorAkhtaruzzaman M.en_US
dc.contributor.authorid57200988091en_US
dc.contributor.authorid35766323200en_US
dc.contributor.authorid57194049079en_US
dc.contributor.authorid57215945332en_US
dc.contributor.authorid57220704093en_US
dc.contributor.authorid54783088200en_US
dc.contributor.authorid57188627799en_US
dc.contributor.authorid55290678700en_US
dc.contributor.authorid7003375391en_US
dc.contributor.authorid7102424614en_US
dc.contributor.authorid57195441001en_US
dc.date.accessioned2023-05-29T08:07:46Z
dc.date.available2023-05-29T08:07:46Z
dc.date.issued2020
dc.descriptionCadmium sulfide; Cadmium sulfide solar cells; Chemical analysis; Deposition; Energy gap; II-VI semiconductors; Semiconductor doping; Thin film solar cells; Thioureas; Zinc; Zinc compounds; Chemical-bath deposition; Comparative analysis; Growth techniques; Optoelectrical properties; Optoelectronic properties; Solar cell devices; Solar cell structures; Zinc concentration; Thin filmsen_US
dc.description.abstractCdS is commonly used as a window layer in solar cell structure and is deposited by different growth techniques. In this study, a source-dependent comparative analysis on chemical bath deposition-grown CdS thin film focusing on different sulphur sources, namely, thiourea (NH2SCNH2) and N-methylthiourea (NH2CSNHCH3), was conducted. Moreover, the effect of Zn2+ doping on as-grown CdS film from the abovementioned sulphur sources was examined. Results reveal that the optical transmittance increases with the increase in zinc concentration. The optical bandgap ranges from 2.35 eV to 2.45 eV whilst thiourea is used as sulphur source, and the bandgap ranges from 2.2 eV to 2.4 eV whilst N-methylthiourea (NMT hereinafter) is utilised. Notably, the electrical properties are independent of the difference in sulphur sources. Zn2+-doped CdS thin films with NMT as sulphur source exhibit ideal optoelectrical properties for the usage as window layers in solar cell device applications. � 2020en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo165197
dc.identifier.doi10.1016/j.ijleo.2020.165197
dc.identifier.scopus2-s2.0-85088099394
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85088099394&doi=10.1016%2fj.ijleo.2020.165197&partnerID=40&md5=9f9ba4d560f230db2922cbef903d912b
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/25275
dc.identifier.volume218
dc.publisherElsevier GmbHen_US
dc.sourceScopus
dc.sourcetitleOptik
dc.titleEffect of zinc doping on the optoelectronic properties of cadmium sulphide (CdS) thin films deposited by chemical bath deposition by utilising an alternative sulphur precursoren_US
dc.typeArticleen_US
dspace.entity.typePublication
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