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Optimization of process parameters for Si lateral PIN photodiode

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dc.citedby5
dc.contributor.authorMenon P.S.en_US
dc.contributor.authorKalthom Tasirin S.en_US
dc.contributor.authorAhmad I.en_US
dc.contributor.authorFazlili Abdullah S.en_US
dc.contributor.authorid57201289731en_US
dc.contributor.authorid55602329100en_US
dc.contributor.authorid12792216600en_US
dc.contributor.authorid14319069500en_US
dc.date.accessioned2023-12-29T07:43:56Z
dc.date.available2023-12-29T07:43:56Z
dc.date.issued2013
dc.description.abstractThis paper is about four optimization factors of process parameters, namely the intrinsic region length, photoabsorption layer thickness, the incident optical power and the bias voltage in a Si lateral pin-photodiode so as to obtain high frequency response and responsivity. Optimization of these parameters is based on Taguchi optimization method. In terms of simulation for the fabrication and device electrical characterization, ATHENA and ATLAS software from Silvaco Int. were used respectively. The identified factors have three best levels which give different combination based on L9 orthogonal array by Taguchi optimization method. In order to find the optimum factors and levels, signal-to-noise ratios (SNR) of larger-the-better (LTB) was applied. The analysis showed that the entire identified factors gave significant effect on the optical properties of the Si lateral pin-photodiode. It is revealed that the best result for responsivity and frequency response after the optimization approaches were 0.62A/W and 13.1 GHz respectively which respond to the optimized value for intrinsic region length of 6 ?m, photoabsorption layer thickness of 50 ?m, incident optical power of 1 mW/cm2 and bias voltage of 3 V. As a conclusion, the optimum solution in achieving the desired high speed photodiode was successfully predicted using Taguchi optimization method. � IDOSI Publications, 2013.en_US
dc.description.natureFinalen_US
dc.identifier.doi10.5829/idosi.wasj.2013.21.mae.99930
dc.identifier.epage103
dc.identifier.issueSPECIAL ISSUE1
dc.identifier.scopus2-s2.0-84879179128
dc.identifier.spage98
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84879179128&doi=10.5829%2fidosi.wasj.2013.21.mae.99930&partnerID=40&md5=f790b41a4cf1bd70d80de7133901841d
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/29999
dc.identifier.volume21
dc.pagecount5
dc.sourceScopus
dc.sourcetitleWorld Applied Sciences Journal
dc.subjectLateral
dc.subjectP-i-n
dc.subjectPhotodiode
dc.subjectSilvaco
dc.subjectSimulation
dc.subjectTaguchi method
dc.titleOptimization of process parameters for Si lateral PIN photodiodeen_US
dc.typeArticleen_US
dspace.entity.typePublication
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