Publication:
Statistical modelling of 14nm n-types MOSFET

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dc.citedby2
dc.contributor.authorNoor Faizah Z.A.en_US
dc.contributor.authorAhmad I.en_US
dc.contributor.authorKer P.J.en_US
dc.contributor.authorSiti Munirah Y.en_US
dc.contributor.authorMohd Firdaus R.en_US
dc.contributor.authorMah S.K.en_US
dc.contributor.authorMenon P.S.en_US
dc.contributor.authorid56395444600en_US
dc.contributor.authorid12792216600en_US
dc.contributor.authorid37461740800en_US
dc.contributor.authorid57191675888en_US
dc.contributor.authorid58140788300en_US
dc.contributor.authorid57191706660en_US
dc.contributor.authorid57201289731en_US
dc.date.accessioned2023-05-29T06:13:30Z
dc.date.available2023-05-29T06:13:30Z
dc.date.issued2016
dc.description.abstractThis paper focuses on virtual modelling and optimization of 14nm n-types planar MOSFET. Here, high-k dielectric and metal gate were used where the high-k material is Hafnium Dioxide (HfO2) and the metal gate is Tungsten Silicide (WSi2). 36 simulations of Taguchi L9 Orthogonal Array method were applied in order to obtain the best parameter design for optimization of both performance parameters which are threshold voltage (VTH) and leakage current (IOFF). The simulation and fabrication for n-type transistor was conducted through Virtual Wafer Fabrication (VWF) Silvaco TCAD Tools named ATHENA and ATLAS for its electrical characterization. For analyzation of the impact parameters on VTH and IOFF, two noise parameters and four process parameters value were varied. From the simulations, the results show the best value were well within ITRS prediction where VTH and IOFF are 0.236737 V and 6.995705 nA/um respectively.en_US
dc.description.natureFinalen_US
dc.identifier.epage95
dc.identifier.issue4
dc.identifier.scopus2-s2.0-84992504831
dc.identifier.spage91
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84992504831&partnerID=40&md5=e767429e3be0d12b3578a92c657ce85c
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/22935
dc.identifier.volume8
dc.publisherUniversiti Teknikal Malaysia Melakaen_US
dc.sourceScopus
dc.sourcetitleJournal of Telecommunication, Electronic and Computer Engineering
dc.titleStatistical modelling of 14nm n-types MOSFETen_US
dc.typeArticleen_US
dspace.entity.typePublication
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