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Electrical Properties of CSS Deposited CdTe Thin Films for Solar Cell Applications

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dc.citedby5
dc.contributor.authorDas N.K.en_US
dc.contributor.authorRazi S.A.en_US
dc.contributor.authorRahman K.S.en_US
dc.contributor.authorMatin M.A.en_US
dc.contributor.authorAmin N.en_US
dc.contributor.authorid34867805900en_US
dc.contributor.authorid57204802121en_US
dc.contributor.authorid56348138800en_US
dc.contributor.authorid57220488718en_US
dc.contributor.authorid7102424614en_US
dc.date.accessioned2023-05-29T07:25:36Z
dc.date.available2023-05-29T07:25:36Z
dc.date.issued2019
dc.descriptionCadmium sulfide; Cadmium telluride; Deposition; Electric properties; Hall effect; Hole concentration; Hole mobility; II-VI semiconductors; Inert gases; Robotics; Semiconducting films; Solar cells; Sublimation; Thin film solar cells; CdTe; Close spaced sublimation; Deposition temperatures; Hall effect measurement; N-type conductivity; Optimum temperature; Solar-cell applications; Substrate temperature; Thin filmsen_US
dc.description.abstractCdTe is a very potential absorber material for thin film solar cell application. In this work CdTe thin films (TF) were deposited on CdS thin films by close-spaced sublimation (CSS) technique at different source and substrate temperature in inert gas condition. To bring out the optimum temperature set for CSS deposited CdTe films, several experiments were done. The process pressure of the chamber during deposition was maintained at 1.5 Torr in a dynamic condition. The effects of deposition temperature on the electrical properties of the as-deposited CdTe films were investigated by Hall Effect measurement. The films were deposited at 610 �C, 630 �C, 650 �C and 670 �C source temperatures. The first three films showed p-type conductivity while n-type conductivity appeared in the film deposited at 670 �C. The hole concentration of the as-grown p-type CdTe films followed an upward trend with the increase of source temperature and it reached a peak value at 650 �C. The highest hole mobility was observed for the lowest source temperature. However, the resistivity of the CdTe films was found increasing with the increase of source temperature. Thus, the CdTe thin film deposited at 650 �C showed better electrical properties for solar cell applications. � 2019 IEEE.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo8934506
dc.identifier.doi10.1109/ICASERT.2019.8934506
dc.identifier.scopus2-s2.0-85078000438
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85078000438&doi=10.1109%2fICASERT.2019.8934506&partnerID=40&md5=b519dd379bc8e4a40f20c7f3286b69c9
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/24660
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.sourceScopus
dc.sourcetitle1st International Conference on Advances in Science, Engineering and Robotics Technology 2019, ICASERT 2019
dc.titleElectrical Properties of CSS Deposited CdTe Thin Films for Solar Cell Applicationsen_US
dc.typeConference Paperen_US
dspace.entity.typePublication
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