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Analyze of input process parameter variation on threshold voltage in 45nm n-channel MOSFET

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dc.citedby5
dc.contributor.authorSalehuddin F.en_US
dc.contributor.authorAhmad I.en_US
dc.contributor.authorHamid F.A.en_US
dc.contributor.authorZaharim A.en_US
dc.contributor.authorElgomati H.A.en_US
dc.contributor.authorMajlis B.Y.en_US
dc.contributor.authorid36239165300en_US
dc.contributor.authorid12792216600en_US
dc.contributor.authorid6603573875en_US
dc.contributor.authorid15119466900en_US
dc.contributor.authorid36536722700en_US
dc.contributor.authorid6603071546en_US
dc.date.accessioned2023-12-28T07:05:44Z
dc.date.available2023-12-28T07:05:44Z
dc.date.issued2011
dc.description.abstractIn this paper, Taguchi method was used to analyze of input process parameters variations on threshold voltage (V TH) in 45nm n-channel Metal Oxide Semiconductor device. The orthogonal array, the signal-to-noise ratio, and analysis of variance are employed to study the performance characteristics of a device. In this paper, there are eight process parameters (control factors) were varied for 2 and 3 levels to performed 18 experiments. Whereas, the two noise factors were varied for 2 levels to get four readings of VTH for every row of experiment. VTH results were used as the evaluation variable. This work was done using TCAD simulator, consisting of a process simulator, ATHENA and device simulator, ATLAS. These two simulators were combined with Taguchi method to aid in design and optimize the process parameters. In this research, S/D implant energy was identified as one of the process parameter that has the strongest effect on the response characteristics. While the halo implant dose was identified as an adjustment factor to get the nominal values of VTH for NMOS device equal to 0.289V at tox 1.06nm. � 2011 IEEE.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo6088294
dc.identifier.doi10.1109/RSM.2011.6088294
dc.identifier.epage74
dc.identifier.scopus2-s2.0-83755173896
dc.identifier.spage70
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-83755173896&doi=10.1109%2fRSM.2011.6088294&partnerID=40&md5=f365f90e8861d93fdcc67332c21d6e73
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/29596
dc.pagecount4
dc.sourceScopus
dc.sourcetitle2011 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts
dc.subjectExperiments
dc.subjectMetallic compounds
dc.subjectMOS devices
dc.subjectSemiconductor devices
dc.subjectSignal to noise ratio
dc.subjectTaguchi methods
dc.subjectThreshold voltage
dc.subjectVanadium
dc.subjectControl factors
dc.subjectDevice simulators
dc.subjectHalo implants
dc.subjectImplant energy
dc.subjectMetal oxide semiconductor device
dc.subjectMOS-FET
dc.subjectN-channel
dc.subjectNMOS devices
dc.subjectNoise factor
dc.subjectOrthogonal array
dc.subjectPerformance characteristics
dc.subjectProcess parameter variations
dc.subjectProcess parameters
dc.subjectProcess simulators
dc.subjectResponse characteristic
dc.subjectSignal to noise
dc.subjectSimulators
dc.titleAnalyze of input process parameter variation on threshold voltage in 45nm n-channel MOSFETen_US
dc.typeConference Paperen_US
dspace.entity.typePublication
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