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Effect of process parameter variations on threshold voltage in 45nm NMOS device

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dc.citedby5
dc.contributor.authorSalehuddin F.en_US
dc.contributor.authorAhmad I.en_US
dc.contributor.authorHamid F.A.en_US
dc.contributor.authorZaharim A.en_US
dc.contributor.authorid36239165300en_US
dc.contributor.authorid12792216600en_US
dc.contributor.authorid6603573875en_US
dc.contributor.authorid15119466900en_US
dc.date.accessioned2023-12-28T07:17:50Z
dc.date.available2023-12-28T07:17:50Z
dc.date.issued2010
dc.description.abstractTaguchi method was used to optimize of the effect process parameter variations on threshold voltage in 45nm NMOS device. In this paper, there are four process parameters (factors) were used, which are Halo Implantation, Source/Drain (S/D) Implantation, Oxide Growth Temperature and Silicide Anneal temperature. The virtual fabrication of the devices was performed by using ATHENA module. While the electrical characterization of the devices was implemented by using ATLAS module. These two modules were combined with Taguchi method to aid in design and optimizer the process parameters. Threshold voltage (VTH) results were used as the evaluation variables. The results were then subjected to the Taguchi method to determine the optimal process parameters and to produce predicted values. The predicted values of the process parameters were then successfully verified with ATHENA and ATLAS's simulator. In this research, oxide growth temperature was identified as one of the process parameters that has the strongest effect on the response characteristics. While the S/D Implantation was identified as adjustment factor to get the nominal values of threshold voltage for NMOS device equal to 0.15V. �2010 IEEE.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo5704034
dc.identifier.doi10.1109/SCORED.2010.5704034
dc.identifier.epage338
dc.identifier.scopus2-s2.0-79951973740
dc.identifier.spage334
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-79951973740&doi=10.1109%2fSCORED.2010.5704034&partnerID=40&md5=4a221894de5ec46bbbdccf9c76341270
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/29641
dc.pagecount4
dc.sourceScopus
dc.sourcetitleProceeding, 2010 IEEE Student Conference on Research and Development - Engineering: Innovation and Beyond, SCOReD 2010
dc.subject45nm NMOS
dc.subjectProcess parameter variation
dc.subjectSilvaco
dc.subjectTaguchi method
dc.subjectGrowth temperature
dc.subjectInnovation
dc.subjectOptimization
dc.subjectSilicides
dc.subjectTaguchi methods
dc.subjectThreshold voltage
dc.subject45nm NMOS
dc.subjectAnneal temperatures
dc.subjectElectrical characterization
dc.subjectHalo implantation
dc.subjectNMOS devices
dc.subjectOptimal process
dc.subjectOptimizers
dc.subjectOxide growth
dc.subjectProcess parameter variations
dc.subjectProcess parameters
dc.subjectResponse characteristic
dc.subjectSilvaco
dc.subjectTaguchi
dc.subjectVirtual fabrication
dc.subjectEngineering research
dc.titleEffect of process parameter variations on threshold voltage in 45nm NMOS deviceen_US
dc.typeConference paperen_US
dspace.entity.typePublication
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