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Effects of high-K dielectrics with metal gate for electrical characteristics of 18nm NMOS device

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dc.citedby19
dc.contributor.authorAtan N.B.en_US
dc.contributor.authorAhmad I.B.en_US
dc.contributor.authorMajlis B.B.Y.en_US
dc.contributor.authorid26422792900en_US
dc.contributor.authorid12792216600en_US
dc.contributor.authorid6603071546en_US
dc.date.accessioned2023-05-16T02:45:42Z
dc.date.available2023-05-16T02:45:42Z
dc.date.issued2014
dc.description.abstractThis paper presents a systematic study of various high-K materials on metal gate MOSFET for 18nm NMOS. From the study, we find a suitable combination materials between the high-K and metal gate, which has beneficial effects on the electrical characteristics of 18nm NMOS. The device shows a good improvement on its result of sub-threshold leakage current, IOFF, and drive current, ION for different dielectric constants (k). The virtual design and fabrication of the device were performed by using Athena module. While electrical characteristic performance was simulated by using Atlas module of SILVACO software. Physical models of the 18nm NMOS were used for simulation from Al2O3, HfO2, and TiO2 as the material gate dielectric, with TiSi2 as the metal gate, which provide higher physical thickness that able to reduce the sub-threshold leakage current IOFF. Thus, excellent dielectric properties such as high-K constant, low IOFF, higher ION, threshold voltage VTH, and electrical characteristics were demonstrated. From the simulation results of ION and IOFF, it was proven that HfO2 is the best dielectric material with combination of metal gate, TiSi2. © 2014 IEEE.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo6920794
dc.identifier.doi10.1109/SMELEC.2014.6920794
dc.identifier.epage59
dc.identifier.scopus2-s2.0-84908260453
dc.identifier.spage56
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84908260453&doi=10.1109%2fSMELEC.2014.6920794&partnerID=40&md5=8b5778d80cc442c4f6347fc853c74ef3
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/21848
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.sourceScopus
dc.sourcetitleIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
dc.titleEffects of high-K dielectrics with metal gate for electrical characteristics of 18nm NMOS deviceen_US
dc.typeConference Paperen_US
dspace.entity.typePublication
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