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Power-loss breakdown of a 750-V, 100-kW, 20-kHz bidirectional isolated DC-DC converter using SiC-MOSFET/SBD dual modules

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dc.citedby25
dc.contributor.authorAkagi H.en_US
dc.contributor.authorYamagishi T.en_US
dc.contributor.authorTan N.M.L.en_US
dc.contributor.authorKinouchi S.-I.en_US
dc.contributor.authorMiyazaki Y.en_US
dc.contributor.authorKoyama M.en_US
dc.contributor.authorid7102912290en_US
dc.contributor.authorid57212336284en_US
dc.contributor.authorid24537965000en_US
dc.contributor.authorid6602155998en_US
dc.contributor.authorid56149085900en_US
dc.contributor.authorid7201421649en_US
dc.date.accessioned2023-05-16T02:46:59Z
dc.date.available2023-05-16T02:46:59Z
dc.date.issued2014
dc.description.abstractThis paper describes the design, construction and testing of a 750-V, 100-kW, 20-kHz bidirectional isolated dual-active-bridge dc-dc converter using four 1.2-kV 400-A SiCMOSFET/SBD dual modules. The maximum conversion efficiency from the dc-input to the dc-output terminals is accurately measured to be as high as 98.7% at 42-kW operation. The overall power loss at the rated-power (100 kW) operation, excluding the gate-drive and control circuit losses, is divided into conduction and switching losses produced by the SiC modules, iron and copper losses due to magnetic devices, and an unknown loss. The power-loss breakdown concludes that the summation of the conduction and switching losses is about 60% of the overall power loss, and that the conduction loss is nearly equal to the switching loss at the 20-kHz, 100-kW operation. © 2014 IEEE.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo6869672
dc.identifier.doi10.1109/IPEC.2014.6869672
dc.identifier.epage757
dc.identifier.scopus2-s2.0-84906673329
dc.identifier.spage750
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84906673329&doi=10.1109%2fIPEC.2014.6869672&partnerID=40&md5=b732bdf41868d3ff67eba1a72b64f8c0
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/22052
dc.publisherIEEE Computer Societyen_US
dc.sourceScopus
dc.sourcetitle2014 International Power Electronics Conference, IPEC-Hiroshima - ECCE Asia 2014
dc.titlePower-loss breakdown of a 750-V, 100-kW, 20-kHz bidirectional isolated DC-DC converter using SiC-MOSFET/SBD dual modulesen_US
dc.typeConference Paperen_US
dspace.entity.typePublication
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