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Structural, morphological, electrical and electron transport studies in ZnO�rGO (wt%�=�0.01, 0.05 and 0.1) based dye-sensitized solar cell

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dc.citedby23
dc.contributor.authorAbdullah H.en_US
dc.contributor.authorAtiqah N.A.en_US
dc.contributor.authorOmar A.en_US
dc.contributor.authorAsshaari I.en_US
dc.contributor.authorMahalingam S.en_US
dc.contributor.authorRazali Z.en_US
dc.contributor.authorShaari S.en_US
dc.contributor.authorMandeep J.S.en_US
dc.contributor.authorMisran H.en_US
dc.contributor.authorid26025061200en_US
dc.contributor.authorid57192404560en_US
dc.contributor.authorid55641720200en_US
dc.contributor.authorid26667546600en_US
dc.contributor.authorid55434075500en_US
dc.contributor.authorid57209440366en_US
dc.contributor.authorid6603595092en_US
dc.contributor.authorid13105366200en_US
dc.contributor.authorid6506899840en_US
dc.date.accessioned2023-05-29T06:00:30Z
dc.date.available2023-05-29T06:00:30Z
dc.date.issued2015
dc.descriptionAtomic force microscopy; Chemical analysis; Deposition; Efficiency; Electron transport properties; Graphene; II-VI semiconductors; Open circuit voltage; Oxide films; Oxide minerals; Reduced Graphene Oxide; Scanning electron microscopy; Substrates; Thin films; Tin oxides; X ray powder diffraction; Zinc oxide; Zinc sulfide; ZnO nanoparticles; Chemical bath deposition methods; Chemical diffusion coefficients; Fluorine doped tin oxide; Hexagonal wurtzite structure; Photocurrent density; Photovoltaic performance; Power conversion efficiencies; Transport resistance; Dye-sensitized solar cellsen_US
dc.description.abstractZinc oxide�reduced graphene oxide (ZnO�rGO) thin films were fabricated on a fluorine-doped tin oxide glass substrate by a chemical bath deposition method. The thin films were immersed in the Eosin Y dye for 24 and 48�h to be fabricated as a dye-sensitized solar cell. ZnO hexagonal wurtzite structures were analyzed by X-ray diffraction analysis. Field effect scanning electron microscope showed the images of ZnO nanoparticles and nanobranches. The atomic force microscopy analysis estimated the average roughness of ZnO�rGO films doped with 0.01, 0.05 and 0.1�wt% which varied from 178 to 267�nm. The electrical or photovoltaic performance of ZnO�rGO were measured and compared accordingly by considering their power conversion efficiency, ?, photocurrent density, Jsc, open-circuit voltage, Voc and fill factor, FF. The cell�s efficiency of ZnO with 0.01�wt% rGO, 0.05�wt% rGO and 0.1�wt% rGO reached ?�=�2.36, 0.78 and 0.38�%, respectively. EIS analysis estimated the effective electron lifetime, ?eff, effective electron chemical diffusion coefficient, Deff, effective electron diffusion length of the photoanode, Ln, charge transport resistance, Rct and transport resistance, Rt. � 2015, Springer Science+Business Media New York.en_US
dc.description.natureFinalen_US
dc.identifier.doi10.1007/s10854-015-2679-y
dc.identifier.epage2270
dc.identifier.issue4
dc.identifier.scopus2-s2.0-84925504242
dc.identifier.spage2263
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84925504242&doi=10.1007%2fs10854-015-2679-y&partnerID=40&md5=c5401b3fbd744e219b60e6aaf9ae056a
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/22365
dc.identifier.volume26
dc.publisherSpringer Science and Business Media, LLCen_US
dc.sourceScopus
dc.sourcetitleJournal of Materials Science: Materials in Electronics
dc.titleStructural, morphological, electrical and electron transport studies in ZnO�rGO (wt%�=�0.01, 0.05 and 0.1) based dye-sensitized solar cellen_US
dc.typeArticleen_US
dspace.entity.typePublication
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