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Investigation of the effect of anodization time and annealing temperature on the physical properties of ZrO2 thin film on a Si substrate

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dc.citedby5
dc.contributor.authorGoh K.H.en_US
dc.contributor.authorLee H.J.en_US
dc.contributor.authorLau S.K.en_US
dc.contributor.authorTeh P.C.en_US
dc.contributor.authorRamesh S.en_US
dc.contributor.authorTan C.Y.en_US
dc.contributor.authorWong Y.H.en_US
dc.contributor.authorid57069579300en_US
dc.contributor.authorid57190622221en_US
dc.contributor.authorid57193418930en_US
dc.contributor.authorid57193423703en_US
dc.contributor.authorid7103211834en_US
dc.contributor.authorid16029485400en_US
dc.contributor.authorid36605495300en_US
dc.date.accessioned2023-05-29T06:38:00Z
dc.date.available2023-05-29T06:38:00Z
dc.date.issued2017
dc.descriptionAnnealing; Grain size and shape; Morphology; Scanning electron microscopy; Silica; Silicon; Sodium hydroxide; Sputtering; Zircon; Zirconia; Annealed samples; Annealing temperatures; Anodization process; Anodization time; Anodizations; Fourier transform infrared microscopies; Scherrer equations; ZrO2; Thin filmsen_US
dc.description.abstractThis research work studied the effects of various anodization times (5, 10, 15, 20 and 25 min) and various annealing temperatures (500, 600, 700, 800 and 900 �C) on ZrO2 thin film on a Si substrate. The ZrO2 thin film was prepared via sputtering and anodization processes on a Si substrate. The existence of Si, SiO2, m-ZrO2, t-ZrO2 and ZrSiO4 was confirmed by x-ray diffraction, Fourier transform infrared microscopy and Raman spectroscopy. In addition, NaOH was observed as a residue on the surface of the thin film. The grain size and microstrain of both m-ZrO2, and t-ZrO2 were calculated using the Williamson-Hall and/or Scherrer equation. The morphology of samples was examined by scanning electron microscopy. In contrast to unannealed samples, the annealed samples have a smaller grain size, less NaOH, and SiO2 with a smoother surface. However, the SiO2 existed when being annealed at higher temperatures (?800 �C). � 2017 IOP Publishing Ltd.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo86414
dc.identifier.doi10.1088/2053-1591/aa824e
dc.identifier.issue8
dc.identifier.scopus2-s2.0-85029161357
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85029161357&doi=10.1088%2f2053-1591%2faa824e&partnerID=40&md5=82a1ee9ed77770b6109e042ff637bb3b
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/23146
dc.identifier.volume4
dc.publisherInstitute of Physics Publishingen_US
dc.sourceScopus
dc.sourcetitleMaterials Research Express
dc.titleInvestigation of the effect of anodization time and annealing temperature on the physical properties of ZrO2 thin film on a Si substrateen_US
dc.typeArticleen_US
dspace.entity.typePublication
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