Publication:
Analytical modelling, simulation and comparative study of multi-junction (GaInP2/InGaAs/Ge) solar cell efficiency

Simple item page
dc.citedby3
dc.contributor.authorAl-Ezzi A.S.en_US
dc.contributor.authorAnsari M.N.M.en_US
dc.contributor.authorAhmed S.K.en_US
dc.contributor.authorTan N.M.L.en_US
dc.contributor.authorNordin N.A.en_US
dc.contributor.authorNomanbhay S.M.en_US
dc.contributor.authorid57194650534en_US
dc.contributor.authorid55489853600en_US
dc.contributor.authorid25926812900en_US
dc.contributor.authorid24537965000en_US
dc.contributor.authorid57668989300en_US
dc.contributor.authorid57217211137en_US
dc.date.accessioned2024-10-14T03:17:57Z
dc.date.available2024-10-14T03:17:57Z
dc.date.issued2023
dc.description.abstractWe present results obtained using MATLAB/Simulink to simulate, experimental data and manufacturer materials specifications of a solar energy generation system (GaInP2/InGaAs/Ge). The simulations were performed by adjusting essential parameters, such as the solar insolation, temperature, and parasitic resistance considering their impact on the I�V and P�V characteristics. The project estimated the generated light current at a certain latitude (Malaysia, Kuala Lumpur) with temperatures and insolation variations through the time of year. Modelling and analysis help to understand the characteristics and behaviour of the present PV generator under lab conditions as well as in the real climate of that location. The results also showed that the power obtained is enhanced under higher incident light intensity, whereas it drops while increasing the PV cell temperature. Moreover, the results included parasitic resistors, which have different impact on the output power. The power conversion efficiency is ideal with the highest shunt resistance and inversely proportional to the series resistance. The PV cell was tested by a solar simulator and the experimental results were compared to the simulation measurements and manufacturer specifications of the PV cell. In addition, the PV cell was inspected by scanning electron microscopy equipped with energy dispersive X-ray (EDX) for morphological characterization and elemental composition of the thin film solar cell. � 2023, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.en_US
dc.description.natureFinalen_US
dc.identifier.doi10.1007/s10825-023-02021-z
dc.identifier.epage1060
dc.identifier.issue4
dc.identifier.scopus2-s2.0-85153874637
dc.identifier.spage1048
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85153874637&doi=10.1007%2fs10825-023-02021-z&partnerID=40&md5=2d8ea7855a0d22c4dd77d9859a253466
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/34099
dc.identifier.volume22
dc.pagecount12
dc.publisherSpringeren_US
dc.sourceScopus
dc.sourcetitleJournal of Computational Electronics
dc.subjectMATLAB/Simulink
dc.subjectPhotovoltaic �PV� cell
dc.subjectPower conversion efficiency (PCE)
dc.subjectP�V and I�V curves
dc.subjectConversion efficiency
dc.subjectElectric resistance
dc.subjectIncident light
dc.subjectIncident solar radiation
dc.subjectMATLAB
dc.subjectScanning electron microscopy
dc.subjectSpecifications
dc.subjectThin film solar cells
dc.subjectCell-be
dc.subjectCell/B.E
dc.subjectCell/BE
dc.subjectI - V curve
dc.subjectMATLAB/ SIMULINK
dc.subjectPhotovoltaic �PV� cell
dc.subjectPhotovoltaics
dc.subjectPower conversion efficiencies
dc.subjectPower conversion efficiency
dc.subjectP�V and I�V curve
dc.subjectSolar energy
dc.titleAnalytical modelling, simulation and comparative study of multi-junction (GaInP2/InGaAs/Ge) solar cell efficiencyen_US
dc.typeArticleen_US
dspace.entity.typePublication
Files
Collections
SCOPUS