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A Comparative Study on p- and n-Type Silicon Heterojunction Solar Cells by AFORS-HET

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dc.contributor.authorAlkharasani W.en_US
dc.contributor.authorAmin N.en_US
dc.contributor.authorShahahmadi S.en_US
dc.contributor.authorAlkahtani A.en_US
dc.contributor.authorBintimohamad I.en_US
dc.contributor.authorChelvanathan P.en_US
dc.contributor.authorKiong T.en_US
dc.contributor.authorid57812336100en_US
dc.contributor.authorid7102424614en_US
dc.contributor.authorid55567116600en_US
dc.contributor.authorid57812929800en_US
dc.contributor.authorid55898400600en_US
dc.contributor.authorid35766323200en_US
dc.contributor.authorid57216824752en_US
dc.date.accessioned2023-05-29T09:37:31Z
dc.date.available2023-05-29T09:37:31Z
dc.date.issued2022
dc.descriptionCompetition; Conversion efficiency; Defects; Electron affinity; Manufacture; Production efficiency; Silicon solar cells; Silicon wafers; AFORS-HET; Crystalline silicon solar cells; Heterojunction solar cells; N type silicon; N- and p-type wafer; P-type silicon; P-type wafer; Rear and front-emitter; Silicon heterojunctions; Simulation; Heterojunctionsen_US
dc.description.abstractDespite the increasing trend of n-type silicon wafer utilization in the manufacturing of high-efficiency heterojunction solar cells due to the superior advantages over p-type counterparts, its high manufacturing cost remains to be one of the most crucial factors, which impedes its market share growth with state-of-the-art silicon heterojunction (SHJ) solar cells demonstrating high conversion efficiencies from various configurations, the prospect of using an n-type wafer is debatable from a cost-efficiency point of view. Hence, a systematic comparison between p- and n-type SHJ solar cells was executed in this work using AFORS-HET numerical software. Front and rear-emitter architectures were selected for each type of wafer with ideal (without defects) and non-ideal (with defects) conditions. For ideal conditions, solar cells with p-type wafers and a front-emitter structure resulted in a maximum conversion efficiency of 28%, while n-type wafers demonstrated a maximum efficiency of 26% from the rear-emitter structure. These high-performance devices were possible due to the optimization of the bandgap and electron-affinity for all passivating and doping layers with values ranging from 1.3 to 1.7 eV and 3.9 to 4 eV, respectively. The correlation between the device structure and the type of wafers as demonstrated here will be helpful for the development of both types of solar cells with comparable performance. � 2022 by the authors. Licensee MDPI, Basel, Switzerland.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo3508
dc.identifier.doi10.3390/ma15103508
dc.identifier.issue10
dc.identifier.scopus2-s2.0-85134619149
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85134619149&doi=10.3390%2fma15103508&partnerID=40&md5=df6b0ed94527fc51a4dc7ad12a15ce6b
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/26882
dc.identifier.volume15
dc.publisherMDPIen_US
dc.relation.ispartofAll Open Access, Gold, Green
dc.sourceScopus
dc.sourcetitleMaterials
dc.titleA Comparative Study on p- and n-Type Silicon Heterojunction Solar Cells by AFORS-HETen_US
dc.typeArticleen_US
dspace.entity.typePublication
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