Publication:
Interplay between variable direct current sputtering deposition process parameters and properties of ZnO:Ga thin films

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dc.citedby13
dc.contributor.authorFerdaous M.T.en_US
dc.contributor.authorShahahmadi S.A.en_US
dc.contributor.authorSapeli M.M.I.en_US
dc.contributor.authorChelvanathan P.en_US
dc.contributor.authorAkhtaruzzaman M.en_US
dc.contributor.authorTiong S.K.en_US
dc.contributor.authorAmin N.en_US
dc.contributor.authorid55567613100en_US
dc.contributor.authorid55567116600en_US
dc.contributor.authorid57201282111en_US
dc.contributor.authorid35766323200en_US
dc.contributor.authorid57195441001en_US
dc.contributor.authorid15128307800en_US
dc.contributor.authorid7102424614en_US
dc.date.accessioned2023-05-29T06:51:16Z
dc.date.available2023-05-29T06:51:16Z
dc.date.issued2018
dc.descriptionConductive films; Gallium compounds; Grain growth; II-VI semiconductors; Infrared spectroscopy; Oxide films; Sputtering; Zinc oxide; Gallium doped zinc oxides; Optoelectronic properties; Spatial variations; Sputtering deposition; Transparent conductive oxides; Thin filmsen_US
dc.description.abstractGallium-doped zinc oxide (GZO) is a potential transparent conductive oxide material suitable for modern photovoltaics among other applications. In this study, GZO thin films were deposited by a confocal direct current sputtering system to investigate the effects of various deposition parameters such as power (60 and 100 W), substrate temperature (50, 100, 150 and 200 �C) and sample location (3 spots) on optoelectronic properties of GZO films. In this regard, X-ray diffraction, ultraviolet-visible-infrared spectroscopy and Hall measurements were used primarily and the relevant analysis was presented in detail. It was found that the low power (60 W) deposition produces more superior optoelectronic properties than the high power (100 W) deposition yielding resistivity of 1.9 � 10?3 ?�cm and over 89% average transmittance in the visible spectrum with the considerable improved blue response. The substrate temperature was found to improve optoelectronic properties and over 43% enhancement in the resistivity was achieved at the optimum temperature of 150 �C. In both aforesaid cases, improvement in the electrical conductivity was linked to the grain growth and the increase in free carriers. Effect of these two deposition parameters influenced the scale of optoelectronic uniformity, which was analyzed in three different spots. Finally, the adverse effect of spatial optoelectronic non-uniformity due to the high power deposition was observed. � 2018 Elsevier B.V.en_US
dc.description.natureFinalen_US
dc.identifier.doi10.1016/j.tsf.2018.06.005
dc.identifier.epage545
dc.identifier.scopus2-s2.0-85049598683
dc.identifier.spage538
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85049598683&doi=10.1016%2fj.tsf.2018.06.005&partnerID=40&md5=a44945a2d537f5c6af7ae2e3997523d2
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/23724
dc.identifier.volume660
dc.publisherElsevier B.V.en_US
dc.sourceScopus
dc.sourcetitleThin Solid Films
dc.titleInterplay between variable direct current sputtering deposition process parameters and properties of ZnO:Ga thin filmsen_US
dc.typeArticleen_US
dspace.entity.typePublication
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