Publication:
Taguchi optimization of a SiGe/Si quantum dot SOI-based lateral PIN photodiode

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dc.citedby1
dc.contributor.authorMenon P.S.en_US
dc.contributor.authorTasirin S.K.en_US
dc.contributor.authorAhmad I.en_US
dc.contributor.authorAbdullah S.F.en_US
dc.contributor.authorid57201289731en_US
dc.contributor.authorid55602329100en_US
dc.contributor.authorid12792216600en_US
dc.contributor.authorid14319069500en_US
dc.date.accessioned2023-05-16T02:47:41Z
dc.date.available2023-05-16T02:47:41Z
dc.date.issued2014
dc.description.abstractA high performance lateral silicon photodiode was designed on a Silicon-on-insulator (SOI)-based substrate with SiGe/Si quantum dot technology. The device has the potential of being a serious candidate for applications in sensing applications as well as in optical fiber communications. Five device process parameters and two device noise factors were identified to make the virtual device design insensitive to variation in the selected fabrication parameters. An L9 array from Taguchi method was used to optimize the device design. The simulator of ATHENA and ATLAS were used for photodiode fabrication process and electrical characterization, respectively. The results obtained for responsivity and frequency response after the optimization approach were 0.36 A/W and 21.2 GHz respectively which correspond to the optimization value for the intrinsic region length of 6 ?m, photo-absorption layer thickness of 0.505 ?m, incident optical power of 0.5 mW/cm2 and bias voltage of 3.5 V. As a conclusion, the optimum solution in achieving the desired high speed photodiode was successfully predicted using Taguchi optimization method. © (2014) Trans Tech Publications, Switzerland.en_US
dc.description.natureFinalen_US
dc.identifier.doi10.4028/www.scientific.net/AMR.925.646
dc.identifier.epage650
dc.identifier.scopus2-s2.0-84901719054
dc.identifier.spage646
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84901719054&doi=10.4028%2fwww.scientific.net%2fAMR.925.646&partnerID=40&md5=8fc7462bd0fa8c598035f5d7b63978bc
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/22133
dc.identifier.volume925
dc.publisherTrans Tech Publicationsen_US
dc.sourceScopus
dc.sourcetitleAdvanced Materials Research
dc.titleTaguchi optimization of a SiGe/Si quantum dot SOI-based lateral PIN photodiodeen_US
dc.typeConference Paperen_US
dspace.entity.typePublication
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