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Optimization of 10nm Bi-GFET Device for higher ION/IOFF ratio using Taguchi Method

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dc.citedby3
dc.contributor.authorRoslan A.F.en_US
dc.contributor.authorKaharudin K.E.en_US
dc.contributor.authorSalehuddin F.en_US
dc.contributor.authorZain A.S.M.en_US
dc.contributor.authorAhmad I.en_US
dc.contributor.authorFaizah Z.A.N.en_US
dc.contributor.authorHazura H.en_US
dc.contributor.authorHanim A.R.en_US
dc.contributor.authorIdris S.K.en_US
dc.contributor.authorZaiton A.M.en_US
dc.contributor.authorMohamad N.R.en_US
dc.contributor.authorHamid A.M.A.en_US
dc.contributor.authorid57203514087en_US
dc.contributor.authorid56472706900en_US
dc.contributor.authorid36239165300en_US
dc.contributor.authorid55925762500en_US
dc.contributor.authorid12792216600en_US
dc.contributor.authorid56395444600en_US
dc.contributor.authorid35108985200en_US
dc.contributor.authorid57193616206en_US
dc.contributor.authorid57202632295en_US
dc.contributor.authorid36069361000en_US
dc.contributor.authorid55383652800en_US
dc.contributor.authorid36570222300en_US
dc.date.accessioned2023-05-29T06:50:06Z
dc.date.available2023-05-29T06:50:06Z
dc.date.issued2018
dc.descriptionAnalysis of variance (ANOVA); Field effect transistors; Graphene transistors; Ion implantation; Ions; Taguchi methods; Bilayer Graphene; Dominant process; Halo implants; Implant energy; L9 orthogonal arrays; Parameter setting; Process parameters; Statistical modeling; Signal to noise ratioen_US
dc.description.abstractThe simulation and statistical modeling are conducted using Silvaco TCAD tools and L9 orthogonal array (OA) of Taguchi method respectively to design a proposed layout of 10 nm gate length (L g ) Bilayer Graphene Field Effect Transistor (Bi-GFET). The investigated process parameters are halo implant dose. halo implant energy, source/drain (S/D) implant dose and source/drain (S/D) implant energy, while the noise factors are halo implant tilt angle and source/drain (S/D) implant tilt angle. The process parameters and the noise factors are optimized using the L 9 orthogonal array (OA) of Taguchi method to achieve the highest possible I ON /I OFF ratio. Utilizing both signal-to-noise ratio (SNR) and analysis of variance (ANOVA), the most dominant process parameters upon I ON /I OFF ratio are identified as S/D implant energy and S/D implant dose with 56% and 37% factor effects on SNR respectively. The largest factor effects on SNR of S/D implant energy shows that it has dominantly affected the I ON /I OFF ratio. The final results indicate that the 1.99 � 10 13 atom/cm 3 of halo implant dose. 174 keV of halo implant energy, 1.63 � 10 14 atom/cm 3 of S/D implant dose, 17 keV of S/D implant energy, 24� of halo implant tilt angle and 9� of S/D implant tilt angle are the best parameter setting in obtaining the highest I on /I off ratio of the device which is measured at 4.811 � 10 5 . � Published under licence by IOP Publishing Ltd.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo12046
dc.identifier.doi10.1088/1742-6596/1123/1/012046
dc.identifier.issue1
dc.identifier.scopus2-s2.0-85058241317
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85058241317&doi=10.1088%2f1742-6596%2f1123%2f1%2f012046&partnerID=40&md5=260439dcd4019ccff391a6be8fae1101
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/23528
dc.identifier.volume1123
dc.publisherInstitute of Physics Publishingen_US
dc.relation.ispartofAll Open Access, Gold
dc.sourceScopus
dc.sourcetitleJournal of Physics: Conference Series
dc.titleOptimization of 10nm Bi-GFET Device for higher ION/IOFF ratio using Taguchi Methoden_US
dc.typeConference Paperen_US
dspace.entity.typePublication
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