Publication:
Modeling and simulation of InAs photodiode on electric field profile and dark current characteristics

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dc.citedby3
dc.contributor.authorRoslan P.S.A.en_US
dc.contributor.authorKer P.J.en_US
dc.contributor.authorAhmad I.en_US
dc.contributor.authorPasupuleti J.en_US
dc.contributor.authorFam P.Z.en_US
dc.contributor.authorid57188858559en_US
dc.contributor.authorid37461740800en_US
dc.contributor.authorid12792216600en_US
dc.contributor.authorid11340187300en_US
dc.contributor.authorid57191487019en_US
dc.date.accessioned2023-05-29T06:11:30Z
dc.date.available2023-05-29T06:11:30Z
dc.date.issued2016
dc.descriptionDark currents; Electric fields; Electron tunneling; Epitaxial growth; Imaging techniques; Infrared radiation; Metallorganic vapor phase epitaxy; Molecular beam epitaxy; Organometallics; Photodiodes; Electric field profiles; Electrical characteristic; Generation recombination; High electric fields; III-IV semiconductors; InAs; Metal-organic vapor phase epitaxy; Trap assisted tunneling; Narrow band gap semiconductorsen_US
dc.description.abstractThis work reports the dark current density-voltage (J-V) characteristics and electric field profile of InAs photodiode with 100?m � 1?m cross sectional area at a temperature of 300K. The device structure was simulated using 2D SILVACO software and the model was used to determine all the optimum material physical parameters based on the parameters reported in other literatures. Dark current mechanisms, which include drift-diffusion current, generation-recombination current, trap-assisted tunneling current and band-to-band tunneling current, were incorporated into the ATLAS electrical characteristics model. Simulated dark current results were compared with the experimental results that were obtained from InAs photodiodes fabricated from molecular beam epitaxy (MBE) and metal organic vapor phase epitaxy (MOVPE) grown InAs wafers. Good agreement is found between the simulation and experimental results. � 2016 IEEE.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo7573623
dc.identifier.doi10.1109/SMELEC.2016.7573623
dc.identifier.epage191
dc.identifier.scopus2-s2.0-84990891489
dc.identifier.spage188
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84990891489&doi=10.1109%2fSMELEC.2016.7573623&partnerID=40&md5=cd14d5e6a4c8f48577ac0b42d23cadf0
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/22658
dc.identifier.volume2016-September
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.sourceScopus
dc.sourcetitleIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
dc.titleModeling and simulation of InAs photodiode on electric field profile and dark current characteristicsen_US
dc.typeConference Paperen_US
dspace.entity.typePublication
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