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Impact of ar flow rates on micro-structural properties of ws2 thin film by rf magnetron sputtering

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dc.citedby6
dc.contributor.authorAkhtaruzzaman M.en_US
dc.contributor.authorShahiduzzaman M.en_US
dc.contributor.authorAmin N.en_US
dc.contributor.authorMuhammad G.en_US
dc.contributor.authorIslam M.A.en_US
dc.contributor.authorSobayel Bin Rafiq K.en_US
dc.contributor.authorSopian K.en_US
dc.contributor.authorid57195441001en_US
dc.contributor.authorid55640096500en_US
dc.contributor.authorid7102424614en_US
dc.contributor.authorid56605566900en_US
dc.contributor.authorid57220973693en_US
dc.contributor.authorid57194049079en_US
dc.contributor.authorid7003375391en_US
dc.date.accessioned2023-05-29T09:06:55Z
dc.date.available2023-05-29T09:06:55Z
dc.date.issued2021
dc.description.abstractTungsten disulfide (WS2) thin films were deposited on soda-lime glass (SLG) substrates using radio frequency (RF) magnetron sputtering at different Ar flow rates (3 to 7 sccm). The effect of Ar flow rates on the structural, morphology, and electrical properties of the WS2 thin films was investigated thoroughly. Structural analysis exhibited that all the as-grown films showed the highest peak at (101) plane corresponds to rhombohedral phase. The crystalline size of the film ranged from 11.2 to 35.6 nm, while dislocation density ranged from 7.8 � 1014 to 26.29 � 1015 lines/m2. All these findings indicate that as-grown WS2 films are induced with various degrees of defects, which were visible in the FESEM images. FESEM images also identified the distorted crystallographic structure for all the films except the film deposited at 5 sccm of Ar gas flow rate. EDX analysis found that all the films were having a sulfur deficit and suggested that WS2 thin film bears edge defects in its structure. Further, electrical analysis confirms that tailoring of structural defects in WS2 thin film can be possible by the varying Ar gas flow rates. All these findings articulate that Ar gas flow rate is one of the important process parameters in RF magnetron sputtering that could affect the morphology, electrical properties, and structural properties of WS2 thin film. Finally, the simulation study validates the experimental results and encourages the use of WS2 as a buffer layer of CdTe-based solar cells. � 2021 by the authors. Licensee MDPI, Basel, Switzerland.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo1635
dc.identifier.doi10.3390/nano11071635
dc.identifier.issue7
dc.identifier.scopus2-s2.0-85108203402
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85108203402&doi=10.3390%2fnano11071635&partnerID=40&md5=4f469761b9b8ad0e17ec017f1ee1c560
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/26114
dc.identifier.volume11
dc.publisherMDPI AGen_US
dc.relation.ispartofAll Open Access, Gold, Green
dc.sourceScopus
dc.sourcetitleNanomaterials
dc.titleImpact of ar flow rates on micro-structural properties of ws2 thin film by rf magnetron sputteringen_US
dc.typeArticleen_US
dspace.entity.typePublication
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