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Improvement of MAPbI3 perovskite blend with TiO2 nanoparticles as ReRAM device

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dc.citedby8
dc.contributor.authorThien G.S.H.en_US
dc.contributor.authorTalik N.A.en_US
dc.contributor.authorYap B.K.en_US
dc.contributor.authorNakajima H.en_US
dc.contributor.authorTunmee S.en_US
dc.contributor.authorChanlek N.en_US
dc.contributor.authorGoh B.T.en_US
dc.contributor.authorid56152438600en_US
dc.contributor.authorid55576358000en_US
dc.contributor.authorid26649255900en_US
dc.contributor.authorid36562269300en_US
dc.contributor.authorid55651673700en_US
dc.contributor.authorid24775167600en_US
dc.contributor.authorid24398718100en_US
dc.date.accessioned2023-05-29T08:06:39Z
dc.date.available2023-05-29T08:06:39Z
dc.date.issued2020
dc.descriptionLead compounds; Molar ratio; Morphology; Nanoparticles; organic-inorganic materials; Perovskite; Rhenium compounds; RRAM; Titanium dioxide; Bi-layer devices; Carrier injection; Hybrid organic-inorganic; Multiple applications; Resistive Random Access Memory (ReRAM); Surface coverages; Titanium dioxides (TiO2); Two-step coatings; TiO2 nanoparticlesen_US
dc.description.abstractReducing pinholes formation and enhancing surface coverage of hybrid organic-inorganic halide perovskite (MAPbI3) film is critical in most application such as photovoltaics and memory device. These applications usually incorporate Titanium Dioxide (TiO2) which is widely used to improve carrier injection as well as film morphology. Taking into account the fabrication and preparation cost, rather than forming a bilayer device, this work demonstrates the design of a facile two-step coating method in producing higher surface quality of single layer MAPbI3 modified with the addition of TiO2 nanoparticles. The study of this novel MAPbI3-TiO2 compound reveals an enhanced movement of iodide vacancies towards the ITO interfaces while considering the effect of grain size and film uniformity. Hence, the Resistive Random Access Memory (ReRAM) devices employing the MAPbI3-TiO2 compound shows to aid in improving VSET and VRESET voltage values in which molar ratio of Pb to Ti of 5% in MAPbI3-TiO2 layer shows improved VSET and VRESET values of 3.6 V and ?1.1 V. This study is believed to aid as a forefront in understanding the applicability of a single layer MAPbI3-TiO2 in multiple applications. � 2020 Elsevier Ltd and Techna Group S.r.l.en_US
dc.description.natureFinalen_US
dc.identifier.doi10.1016/j.ceramint.2020.08.075
dc.identifier.epage29051
dc.identifier.issue18
dc.identifier.scopus2-s2.0-85089558726
dc.identifier.spage29041
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85089558726&doi=10.1016%2fj.ceramint.2020.08.075&partnerID=40&md5=4e53c9186cf2c853671c10023526a268
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/25071
dc.identifier.volume46
dc.publisherElsevier Ltden_US
dc.sourceScopus
dc.sourcetitleCeramics International
dc.titleImprovement of MAPbI3 perovskite blend with TiO2 nanoparticles as ReRAM deviceen_US
dc.typeArticleen_US
dspace.entity.typePublication
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