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Theoretical study of the ?2-graphyne p-n junction diode devices

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dc.citedby0
dc.contributor.authorNeshani S.en_US
dc.contributor.authorAhmadi M.T.en_US
dc.contributor.authorGolzan M.M.en_US
dc.contributor.authorid57226600800en_US
dc.contributor.authorid26039596800en_US
dc.contributor.authorid25633569400en_US
dc.date.accessioned2025-03-03T07:42:20Z
dc.date.available2025-03-03T07:42:20Z
dc.date.issued2024
dc.description.abstractDue to the tunable bandgap of ?2-graphyne, there is an expectation that this structure is a favorable candidate for p-n junction diode devices. The characteristic of the pure and hydrogenated ?2-graphyne nanoribbon structures is modeled and investigated from the electrostatic point of view. The charge distribution is approximated in one and two dimensions. The space charge region wide, electric field and the potential along with the current density are calculated for different donor and acceptor doping amounts. Our survey includes various simulated hydrogenated and Oxygenated molecular devices with different unit cell numbers, and their density of states, transmission spectrum, and current voltage diagrams were obtained using VNL Quantum wise ATK software. The results indicate the reduction of the depletion region and the creation of new energy levels in the band gap of the system. The interaction and bending effects of these new levels with the intrinsic levels are also observed. ? 2024 Elsevier B.V.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo416127
dc.identifier.doi10.1016/j.physb.2024.416127
dc.identifier.scopus2-s2.0-85194403293
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85194403293&doi=10.1016%2fj.physb.2024.416127&partnerID=40&md5=9f333c47ebdd6719c3678fa008400205
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/36418
dc.identifier.volume688
dc.publisherElsevier B.V.en_US
dc.sourceScopus
dc.sourcetitlePhysica B: Condensed Matter
dc.subjectElectric power transmission
dc.subjectEnergy gap
dc.subjectHydrogenation
dc.subjectQuantum theory
dc.subjectSemiconductor junctions
dc.subjectDonor and acceptor
dc.subjectDonor-doping
dc.subjectGraphyne
dc.subjectNanoribbon structures
dc.subjectOne dimension
dc.subjectPn junction diodes
dc.subjectSpace charge regions
dc.subjectTheoretical study
dc.subjectTunable Band-gap
dc.subjectTwo-dimensions
dc.subjectElectric fields
dc.titleTheoretical study of the ?2-graphyne p-n junction diode devicesen_US
dc.typeArticleen_US
dspace.entity.typePublication
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