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Application of taguchi method with the interaction test for lower DIBL IN WSix/TiO2 channel vertical double gate NMOS

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dc.citedby3
dc.contributor.authorKaharudin K.E.en_US
dc.contributor.authorSalehuddin F.en_US
dc.contributor.authorZain A.S.M.en_US
dc.contributor.authorAziz M.N.I.A.en_US
dc.contributor.authorAhmad I.en_US
dc.contributor.authorid56472706900en_US
dc.contributor.authorid36239165300en_US
dc.contributor.authorid55925762500en_US
dc.contributor.authorid56508975500en_US
dc.contributor.authorid12792216600en_US
dc.date.accessioned2023-05-29T06:11:45Z
dc.date.available2023-05-29T06:11:45Z
dc.date.issued2016
dc.description.abstractThe poly-Si/SiO2 based MOSFETs have been encountering a problem with the limitation of channel length for the device miniaturization. The drain induced barrier lowering (DIBL) effect is the main threat for the device to acquire excellent device's characteristics. Thus, the metal-gate/high-k technology is a smart choice for the future replacement of poly-Si/SiO2 channel. This paper introduces the implementation of WSix/TiO2 channel to replace the poly-Si/SiO2 channel in vertical double-gate NMOS structure, followed by the application of Taguchi method to reduce the drain induced barrier lowering (DIBL) effects. The device was virtually fabricated and characterized by using both ATHENA and ATLAS modules of SILVACO TCAD tools. The L12 orthogonal array, main effects, signal-to noise ratio (SNR) and analysis of variance (ANOVA) were utilized to analyze the effect of process parameter variations on the DIBL. Later, the interactions between the process parameters were investigated by using L8 orthogonal array of Taguchi method. Based on the final results, halo implant tilt angle and source/drain (S/D) implant energy were identified as the most dominant process parameters where each of them contributes 24% and 16% of factor effects on SNR respectively. The lowest possible value of DIBL after the optimization with the interaction test is 1.552 mV/V. � 2006-2016 Asian Research Publishing Network (ARPN).en_US
dc.description.natureFinalen_US
dc.identifier.epage7103
dc.identifier.issue11
dc.identifier.scopus2-s2.0-84978727600
dc.identifier.spage7093
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84978727600&partnerID=40&md5=701cecf966403fcf608cbca90b1347b2
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/22711
dc.identifier.volume11
dc.publisherAsian Research Publishing Networken_US
dc.sourceScopus
dc.sourcetitleARPN Journal of Engineering and Applied Sciences
dc.titleApplication of taguchi method with the interaction test for lower DIBL IN WSix/TiO2 channel vertical double gate NMOSen_US
dc.typeArticleen_US
dspace.entity.typePublication
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