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Copper doping effect in the back surface field layer of CdTe thin film solar cells

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dc.citedby3
dc.contributor.authorAhmad N.I.en_US
dc.contributor.authorKiong T.S.en_US
dc.contributor.authorDoroody C.en_US
dc.contributor.authorRahman K.S.en_US
dc.contributor.authorNorizan M.N.en_US
dc.contributor.authorAhmad M.F.en_US
dc.contributor.authorKar Y.B.en_US
dc.contributor.authorHarif M.N.en_US
dc.contributor.authorAmin N.en_US
dc.contributor.authorid57200991933en_US
dc.contributor.authorid57216824752en_US
dc.contributor.authorid56905467200en_US
dc.contributor.authorid56348138800en_US
dc.contributor.authorid57226822517en_US
dc.contributor.authorid55779469900en_US
dc.contributor.authorid58072938600en_US
dc.contributor.authorid22634024000en_US
dc.contributor.authorid7102424614en_US
dc.date.accessioned2025-03-03T07:45:14Z
dc.date.available2025-03-03T07:45:14Z
dc.date.issued2024
dc.description.abstractIn this work, the Solar Cell Capacitance Simulator (SCAPS-1D) is employed to evaluate the characteristics of CdTe thin films with ZnTe as the Back Surface Field (BSF) layer and estimate the effective copper doping ratio at both the atomic scale and the device operational response perspective. The electrical characteristics of ZnTe, at varying levels of copper doping, were derived using density functional theory (DFT) by applying the generalized gradient approximation (GGA) and Hubbard U corrections (DFT+U). The performance of ZnTe with different Cu concentrations as a BSF layer was evaluated by analysing the values of four key parameters that are open circuit voltage (VOC), short circuit current density (JSC), fill factor (FF), and conversion efficiency (?). The results indicate that an increase in Cu concentration from 0% to 3%, 6%, 10%, and 12% resulted in a reduction of the energy band gap. Specifically, the energy band gap decreased from 2.24 eV to 2.10 eV, 1.98 eV, 1.92 eV, and 1.88 eV, respectively. Optimal Cu doping promotes the favourable shift in the valence band maxima (VBM) and formation of p + -ZnTe, lowering thermionic emission and improving carrier lifetime, which results in an improved ohmic contact, ? = 18.73% for 10% of Cu content. Excessive doping in contrast degraded the overall device performance by forming an unmatched carrier band offset at the front interface with CdS, increasing the acceptor type defect and CdTe compensation rate. Overall, the findings suggest that incorporating a controlled level of Cu, which in this case is around 10%, promotes the efficiency and stability of the proposed CdTe device configuration to a certain extent. ? 2024 The Authorsen_US
dc.description.natureFinalen_US
dc.identifier.doi10.1016/j.aej.2024.01.020
dc.identifier.epage163
dc.identifier.scopus2-s2.0-85182634692
dc.identifier.spage155
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85182634692&doi=10.1016%2fj.aej.2024.01.020&partnerID=40&md5=4610a8037e4bb9a52822e11a39a21a69
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/36856
dc.identifier.volume88
dc.pagecount8
dc.publisherElsevier B.V.en_US
dc.relation.ispartofAll Open Access; Gold Open Access
dc.sourceScopus
dc.sourcetitleAlexandria Engineering Journal
dc.subjectCadmium sulfide
dc.subjectCapacitance
dc.subjectCarrier lifetime
dc.subjectConversion efficiency
dc.subjectCopper
dc.subjectCopper compounds
dc.subjectDensity functional theory
dc.subjectElectric network analysis
dc.subjectEnergy gap
dc.subjectII-VI semiconductors
dc.subjectOhmic contacts
dc.subjectOpen circuit voltage
dc.subjectSemiconductor doping
dc.subjectThermionic emission
dc.subjectThin film solar cells
dc.subjectThin films
dc.subjectZinc compounds
dc.subjectBack surface field
dc.subjectBacksurface field
dc.subjectCadmium telluride
dc.subjectCell capacitance
dc.subjectDensity functional theory
dc.subjectDensity-functional-theory
dc.subjectEnergy
dc.subjectSolar cell capacitance simulator
dc.subjectZinc telluride
dc.subjectZinc tellurides
dc.subjectCadmium telluride
dc.titleCopper doping effect in the back surface field layer of CdTe thin film solar cellsen_US
dc.typeArticleen_US
dspace.entity.typePublication
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