Publication:
Investigation of Morphological, Optical, and Dielectric Properties of RF Sputtered WOx Thin Films for Optoelectronic Applications

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dc.citedby1
dc.contributor.authorMahjabin S.en_US
dc.contributor.authorHaque M.M.en_US
dc.contributor.authorSobayel K.en_US
dc.contributor.authorSelvanathan V.en_US
dc.contributor.authorJamal M.S.en_US
dc.contributor.authorBashar M.S.en_US
dc.contributor.authorSultana M.en_US
dc.contributor.authorHossain M.I.en_US
dc.contributor.authorShahiduzzaman M.en_US
dc.contributor.authorAlgethami M.en_US
dc.contributor.authorAlharthi S.S.en_US
dc.contributor.authorAmin N.en_US
dc.contributor.authorSopian K.en_US
dc.contributor.authorAkhtaruzzaman M.en_US
dc.contributor.authorid57217200870en_US
dc.contributor.authorid57217203359en_US
dc.contributor.authorid57194049079en_US
dc.contributor.authorid57160057200en_US
dc.contributor.authorid55887499100en_US
dc.contributor.authorid36109906900en_US
dc.contributor.authorid57201742908en_US
dc.contributor.authorid57212814509en_US
dc.contributor.authorid55640096500en_US
dc.contributor.authorid57295122900en_US
dc.contributor.authorid56095200200en_US
dc.contributor.authorid7102424614en_US
dc.contributor.authorid7003375391en_US
dc.contributor.authorid57195441001en_US
dc.date.accessioned2023-05-29T09:36:24Z
dc.date.available2023-05-29T09:36:24Z
dc.date.issued2022
dc.description.abstractTungsten oxide (WOx) thin films were synthesized through the RF magnetron sputtering method by varying the sputtering power from 30 W to 80 W. Different investigations have been conducted to evaluate the variation in different morphological, optical, and dielectric properties with the sputtering power and prove the possibility of using WOx in optoelectronic applications. An Energy Dispersive X-ray (EDX), stylus profilometer, and atomic force microscope (AFM) have been used to investigate the dependency of morphological properties on sputtering power. Transmittance, absorbance, and reflectance of the films, investigated by Ultraviolet-Visible (UV-Vis) spectroscopy, have allowed for further determination of some necessary parameters, such as absorption coefficient, penetration depth, optical band energy gap, refractive index, extinction coefficient, dielectric parameters, a few types of loss parameters, etc. Variations in these parameters with the incident light spectrum have been closely analyzed. Some important parameters such as transmittance (above 80%), optical band energy gap (~3.7 eV), and refractive index (~2) ensure that as-grown WOx films can be used in some optoelectronic applications, mainly in photovoltaic research. Furthermore, strong dependencies of all evaluated parameters on the sputtering power were found, which are to be of great use for developing the films with the required properties. � 2022 by the authors.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo3467
dc.identifier.doi10.3390/nano12193467
dc.identifier.issue19
dc.identifier.scopus2-s2.0-85139762901
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85139762901&doi=10.3390%2fnano12193467&partnerID=40&md5=a1716e56e4157ef1024d992acacfa293
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/26732
dc.identifier.volume12
dc.publisherMDPIen_US
dc.relation.ispartofAll Open Access, Gold, Green
dc.sourceScopus
dc.sourcetitleNanomaterials
dc.titleInvestigation of Morphological, Optical, and Dielectric Properties of RF Sputtered WOx Thin Films for Optoelectronic Applicationsen_US
dc.typeArticleen_US
dspace.entity.typePublication
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