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The Role of CdS:O/CdS Bilayer in the Formation of CdS1-xTex Intermixed Layer in CdTe Absorber

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dc.contributor.authorDas N.K.en_US
dc.contributor.authorFarhad S.F.U.en_US
dc.contributor.authorRahman K.S.en_US
dc.contributor.authorMatin M.A.en_US
dc.contributor.authorAmin N.en_US
dc.contributor.authorid34867805900en_US
dc.contributor.authorid57219816966en_US
dc.contributor.authorid56348138800en_US
dc.contributor.authorid57220488718en_US
dc.contributor.authorid7102424614en_US
dc.date.accessioned2023-05-29T08:09:19Z
dc.date.available2023-05-29T08:09:19Z
dc.date.issued2020
dc.descriptionCadmium sulfide; Cadmium telluride; Conversion efficiency; II-VI semiconductors; Morphology; Near infrared spectroscopy; Semiconductor alloys; Thin film solar cells; Thin films; X ray diffraction; CdTe cells; Close spaced sublimation; Columnar growth; Power conversion efficiencies; SEM image; Solar cell performance; Source temperature; UV-vis-NIR spectroscopy; Cadmium alloysen_US
dc.description.abstractThe formation of CdS1-xTex alloy at the window (CdS)/absorber (CdTe) interface during the synthesis of CdTe thin films is very crucial for enhancing solar cell performance. This work reported the properties of CdTe thin films which were grown onto CdS and CdS:O/CdS bilayer separately by using close-spaced sublimation (CSS). All the as-grown samples were characterized by XRD, FE-SEM, and UV-Vis-NIR spectroscopy, respectively. The XRD result showed that the interdiffusion was prompt for CdTe films deposited onto the CdS layer at source temperature 630 �C. In case of CdS:O/CdS bilayer, the interdiffusion was less pronounced. The SEM images exhibited very compact surface with grains in the range 2.2 - 2.3 �m and columnar growth morphology of the deposited CdTe films. The optical bandgap of CdTe grown on both layers were found to be around 1.46 eV. Finally, the influence of CdS1-x Tex intermixed layer on CdTe cells power conversion efficiency (PCE) was evaluated by the SCAPS-1D simulator. The incorporation of CdS1-x Tex intermixed layer enhanced the PCE of the simulated cell to 22.64%. � 2020 IEEE.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo9300977
dc.identifier.doi10.1109/PVSC45281.2020.9300977
dc.identifier.epage2246
dc.identifier.scopus2-s2.0-85099559065
dc.identifier.spage2242
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85099559065&doi=10.1109%2fPVSC45281.2020.9300977&partnerID=40&md5=402f4e5142163d7212a66a7757a8ddec
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/25430
dc.identifier.volume2020-June
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.sourceScopus
dc.sourcetitleConference Record of the IEEE Photovoltaic Specialists Conference
dc.titleThe Role of CdS:O/CdS Bilayer in the Formation of CdS1-xTex Intermixed Layer in CdTe Absorberen_US
dc.typeConference Paperen_US
dspace.entity.typePublication
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