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Analysis of corner effects of the vertical MOS transistors using 3D device simulation

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dc.contributor.authorChien Fat Chauen_US
dc.date.accessioned2023-05-03T13:31:30Z
dc.date.available2023-05-03T13:31:30Z
dc.date.issued2003-10
dc.descriptionTHS TK7871.95.C44 2003en_US
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/19397
dc.language.isoenen_US
dc.titleAnalysis of corner effects of the vertical MOS transistors using 3D device simulationen_US
dc.typeResource Types::text::Thesisen_US
dspace.entity.typePublication
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